Reconstruction of the GaAs (311)<i>A</i>surface

Wassermeier, M.; Sudijono, J.; Johnson, Matthew D.; Leung, Kevin; Orr, Bradford G.; Däweritz, L.; Ploog, K.

doi:10.1103/physrevb.51.14721

Cited by 125 publications

(93 citation statements)

References 21 publications

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“…25͒ suggest a significantly smaller corrugation height of about 2 ML. This surface re-construction, which is consistent with the electron counting model, 25,26 can lead to the reported 13 RHEED signal, as was shown by a kinematical simulation. 27 Recently, da Silva et al also estimated the interface corrugation height to be 2 ML by the splitting of the confined optical phonons.…”

Section: Introductionsupporting

confidence: 68%

“…29 On the other hand, there is evidence for an interface corrugation with a period of 3.2 nm along the ͓110͔ direction inside these SL's by Raman experiments, 21,22,28 consistent with the RHEED image of the surface in ͓332͔ incidence during the growth. 13 The interface corrugation within the SL's is thus most likely given by the surface reconstruction of ͑113͒ GaAs proposed by Wassermeier et al, 25,26 showing only 2-ML corrugation height.…”

Section: Photoluminescencementioning

confidence: 99%

“…The anisotropy in the disorder is evident in STM images of the ͑113͒ GaAs surface. 25 It leads to the formation of extended anisotropic potential minima, which are able to localize the band edge electronic states 63 even with an interface roughness of only 2 ML . This roughness is actually present at the interfaces, as is estimated from the inhomogeneous width of the type-I PL.…”

Section: Localized Statesmentioning

confidence: 99%

“…We investigate a series of SL's with different layer thicknesses, grown by molecular-beam epitaxy ͑MBE͒, showing the ͑8ϫ1͒ reconstruction 13,25 in in situ RHEED. We compare the polarization degree ͑PD͒ of the PL with the results of multiband k•p calculations of the electronic states and optical transitions near the fundamental band gap.…”

Section: Introductionmentioning

confidence: 99%

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Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices

et al. 1996

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We report on the influence of the interface corrugation in ͑113͒-grown GaAs/AlAs superlattices on their band-edge optical properties both in theory and experiment. We calculate the subband dispersions and the optical anisotropies in a multiband k•p formalism. The dominating contribution to the optical anisotropies is found to be due to the intrinsic properties of the valence-band structure. The corrugation modifies the density of states only slightly, giving no evidence of a quantum-wire behavior. By comparing the calculation with the experimental optical anisotropy, we can estimate the corrugation height to be at most 2 monolayers. The experiments show that deviations from the regular corrugation lead to an anisotropic interface disorder. This gives rise to an enhanced anisotropy of the band-edge states, which was so far attributed to the corrugation itself. The luminescence of the localized type-I states at the band-edge show an enhanced optical anisotropy in comparison to the luminescence of the extended states, revealing the anisotropic nature of their localization sites. In type-II samples, deeply localized, isolated type-I states (⌫ quantum boxes͒ dominate the luminescence at short delays after pulsed excitation and at higher lattice temperatures or excitation densities, due to their strong radiative decay compared to the type-II states. These quantum boxes are observed individually by high spatial and spectral resolution. ͓S0163-1829͑96͒06039-0͔

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Section: Introductionsupporting

confidence: 68%

Section: Photoluminescencementioning

confidence: 99%

Section: Localized Statesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices

et al. 1996

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“…[5][6][7] The other stable high-index surface, the ͑113͒A orientation, results from a very complex arrangement of the same structural units, the so-called ͑8 ϫ 1͒ reconstruction. 8,9 Here, we employ density-functional theory ͑DFT͒ calculations to investigate the elementary growth processes on InAs͑137͒A. Since this surface contains already all structural motifs of the more complex ͑2 5 11͒A and ͑113͒A͑8 ϫ 1͒ surfaces, it may serve as an example to study adsorption, surface diffusion, and nucleation on high-index substrates.…”

Section: Introductionmentioning

confidence: 99%

Atomic processes in molecular beam epitaxy on strained InAs(137): A density-functional theory study

Kratzer

Hammerschmidt

2009

Phys. Rev. B

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The atomic processes in molecular beam epitaxy of InAs on the InAs͑137͒ surface are investigated by means of first-principles total-energy calculations. We consider layer-by-layer growth on InAs͑137͒ facets as a typical process during the evolution of shallow InAs islands in the Stranski-Krastanov growth mode of InAs on GaAs that is exploited for the self-assembly of heteroepitaxial quantum dots. From the calculated energetics we conclude that a growth scenario where an As 2 molecule adsorbs on a single In adatom, followed by capture of another In adatom, is most likely. Moreover, our calculations of the potential-energy surface for In adatoms on the InAs͑137͒ surface show that In adatoms are highly mobile. Surface diffusion on InAs͑137͒ is found to be almost isotropic with energy barriers Ͻ0.3 eV for adatom hopping. Aiming at an understanding of the growth processes at the strained side facets of quantum dots, we extend our calculations to isotropically strained InAs͑137͒ facets. It is found that the compressive strain present on side facets of shallow InAs islands on GaAs leads to a considerable lowering of the binding energy of In adatoms. The height of diffusion barriers is found to be less affected by the strain. Most importantly, the intermediate species consisting of an In adatom plus an adsorbed As 2 molecule is destabilized by compressive strain in excess of −5%. This finding leads us to the conclusion that layer growth on InAs͑137͒ facets ceases in highly strained regions of InAs islands on GaAs, in line with the observed shape evolution of such islands.

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Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

Jacobi

Platen

Setzer

2000

phys. stat. sol. (b)

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The GaAs(001), (110), (111)A, (1¯1¯1¯)B, (112)A, (1¯1¯2¯)B, (113) A, (1¯1¯3¯)B, (114)A and (1¯1¯4¯)B surfaces were prepared by molecular‐beam epitaxy (MBE) and analyzed in situ by photoelectron spectroscopy of the Ga and As 3d core levels using synchrotron radiation. An overview of the results is given. For each surface also a brief summary of its structure is added. It is shown how surface core‐level shifts (SCLS) act as a tool supporting the structure evaluation of these surfaces. The (001) and (110) surfaces are touched only briefly for comparison. The (111) surfaces are discussed more deeply. The high‐index surfaces can be characterized as follows: (113)A exhibits a low‐energy surface and a new type of reconstruction which consists of As‐dimer zig‐zag chains; (112)A and (1¯1¯2¯)B are heavily faceted and (114)A and (1¯1¯4¯)B are quite well understood in analogy to the (001) surface.

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Reconstruction of the GaAs (311)Asurface

Cited by 125 publications

References 21 publications

Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices

Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices

Atomic processes in molecular beam epitaxy on strained InAs(137): A density-functional theory study

Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

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