Reconfigurable Switched-Capacitor Power Converters

Abstract

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A High-Efficiency Switched-Capacitance HTFET Charge Pump for Low-Input-Voltage Applications

“…As the most critical parameter in the charge pumps, PCE is defined as the ratio of delivered energy to the output load E OUT to the input energy E IN [6][7], i.e. overlapping phase control driver, E REDIS represents the energy loss due to the charge redistribution of capacitors when switching occurs, E SW represents the switching loss due to charge and discharge of parasitic stray capacitance, E REVERS represents the energy loss due to reverse current conduction through the switches, and E COND represents the energy loss due to on-resistance of the switches and parasitic equivalent series resistance (ESR) of the capacitors [6]- [8].…”

“…7 shows the transient voltage waveforms of at the output port, showing significant higher output voltage with the proposed topology. In [6] [7], a level shifter boosting the phase control swing from 0~VCC to 0~2VCC was employed to control PMOS switches, reaching the same on-resistance reduction. In contrast, the proposed topology needs no level-shifters, which saves area and power in return.…”

Energy Harvesting for Wireless Sensor Networks Review

“…This type of energy scavenging is free of emissions since it does not produce contaminants or bypass products that are harmful to the environment [21].…”

Design of reliable 2&#x00D7;V<inf>DD</inf> and 3&#x00D7;V<inf>DD</inf> series-parallel charge pumps in nanoscale CMOS

“…DB and HCI can cause degradation of gate oxide, changes on switching characteristics, and even thermal runaway of the oxide, while source/drain-substrate junction diode breakdown could potentially short the drain or source node to ground. Among many circuits that are facing the risk of transistor breakdown, charge pumps demand immediate solutions due to their broad applications of generating voltages higher than V DD in power management circuits [3], nonvolatile memories [4] and analog-to-digital converters [2]. If such a high-voltage charge pump is built with low-voltage nano-scale CMOS process, thin gate oxide and short channels of power MOS switches would suffer considerable over-voltage stress.…”

“…With compatibility to low cost CMOS technologies, circuit level solutions are highly desirable in practical implementations and mass production. Unfortunately, with sophisticated power devices switching and circuit reconfiguration schemes [3], most of advanced charge pumps in high-voltage applications are not optimized for reliability.…”