Reconfigurable nanowire electronics – A review

Weber, Walter M.; Heinzig, André; Trommer, Jens; Martin, D.; Grube, Matthias; Mikolajick, Thomas

doi:10.1016/j.sse.2014.06.010

Cited by 88 publications

(73 citation statements)

References 26 publications

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“…Beside the direct comparison of the results delivered by the proposed synthesis method and those obtained with the help of the conventional Espresso tool (in terms of the overall circuit size comprising 2-input logic elements and some special polymorphic functional blockssee corresponding sections in Table 2), several additional tests were performed in order to find whether the proposed method exhibits any dependence on the following attributes • Figure 2, total number of logic inputs (test circuits defined in Table 1 are shown from left to right in the order as follows -1, 2, 3, 5,6,7,13,14,15,8,9,10,11,12,4), to show the effect on the resulting synthesis method efficiency (compared with Espresso tool as 100 % reference).…”

Section: Resultsmentioning

confidence: 99%

“…• Figure 4, percentage of the inputs with logic 1 value (test circuits defined in Table 1 are shown from left to right in the order as follows -11, 12, 15, 2, 4, 7, 1, 3, 5,6,8,9,10,13,14). Reference in the case of the different percentage of inputs with a logic 1 value is shown here for circuits defined in Table 2.…”

Section: Resultsmentioning

confidence: 99%

“…Today's applications are often based on unipolar semiconductor transistors, but the concept of polymorphic electronics is more general and allows to conveniently employ new emerging devices like graphene [7] or nanowire structures [8], ambipolar devices utilizing suitable organic polymers with semiconductor-like properties [9], etc, which makes it possible to obtain a new generation of advanced multi-functional logic elements.…”

Section: Introductionmentioning

confidence: 99%

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Novel Approach To Synthesis of Logic Circuits Based on Multifunctional Components

Crha

Růžička

Simek

2016

Journal of Electrical Engineering

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Multifunctional logic continuously becomes an important way how to implement compact and cheap circuits with intrinsic reconfiguration features. Polymorphic electronics concept with its substantial technological independency opens a way to fulfil this objective through the adoption of emerging semiconductor technologies and advanced synthesis methods. The paper comes with a proposal of a novel synthesis method oriented on the exploitation of polymorphic electronics principles. Key part of it is based on Boolean divisor identification and function kernelling technique. The proposed method is evaluated with several test circuits.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Novel Approach To Synthesis of Logic Circuits Based on Multifunctional Components

Crha

Růžička

Simek

2016

Journal of Electrical Engineering

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“…Starting material for fabrication of devices can also be one dimensional, such as nanowires [12]. Fabrication of devices starting from nanowires is demonstrated in many works [13].…”

Section: Nanowire Based Devicesmentioning

confidence: 99%

Progress in Materials for Microelectronics and Further Challenges

Novkovski¹,

Skeparovski²,

Paskaleva³

et al. 2017

Contributions

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Development of materials and technologies for microelectronics is required by the needs of the constantly increasing level of integration of microelectronics circuits. Increase of the integration level compels downscaling of all the dimensions of devices, which in its turn requires very thin layers with exceptional quality due to rather high electric fields at working conditions. First, technological improvements are adopted aimed at fabrication of materials with uniform quality, geometrical flatness and extremely low density of intentionally introduced defects. Second, new fabrication methods are developed providing materials with much better quality. Third, new materials showing better properties than the standard (conventional) ones are obtained and developed further.Decreasing the dimensions of the layers changes the nature of the physical phenomena involved in the functioning of devices. Quantum mechanical mechanisms are more and more important in the description of the properties of the materials and devices on the nanoscale. The question arises where is the limit of the possibilities of the materials and technologies for nanoscale electronics.

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“…RFETs have been highlighted due to their novel functionality providing both n-type and p-type field-effect transistor (FET) function in a single device selected simply by an electric signal. [4][5][6][7][8][9] Up to date, reconfigurable transistors have been limited to dynamic programming on the function, i.e., a constant program signal needs to be applied to maintain the required function.However, a nonvolatile component that can be embedded into these reconfigurable logic devices would not only eliminate the requirement of having the configuration voltage applied continuously but would also bring additional advantages in terms of multivalent memory operation and close proximity between memory and logic. A number of demonstrations of nanowire-based nonvolatile memory cells have been reported in literature.…”

mentioning

confidence: 99%

Reconfigurable Si Nanowire Nonvolatile Transistors

Park

Jeon

Piontek

et al. 2017

Adv Elect Materials

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circuits. [2,3] The fine-grain reconfiguration approaches aim at the reduction of routingrelated delays and chip area reduction. A very interesting fine-grain approach that emerged during the last decade is based on polarity programmable or reconfigurable field-effect transistors (RFETs). RFETs have been highlighted due to their novel functionality providing both n-type and p-type field-effect transistor (FET) function in a single device selected simply by an electric signal. [4][5][6][7][8][9] Up to date, reconfigurable transistors have been limited to dynamic programming on the function, i.e., a constant program signal needs to be applied to maintain the required function.However, a nonvolatile component that can be embedded into these reconfigurable logic devices would not only eliminate the requirement of having the configuration voltage applied continuously but would also bring additional advantages in terms of multivalent memory operation and close proximity between memory and logic. A number of demonstrations of nanowire-based nonvolatile memory cells have been reported in literature. [10][11][12] In these realizations, the channel polarity of the memory cell is determined by the doping type of silicon. First demonstrators of nonvolatile reconfigurable device operation were shown with the use of a common back gate electrode; [13] in the work by Schwalke et al., the charge trapping is performed using the buried oxide while a high voltage is applied to the global back gate. With this approach, it is difficult to individually address the desired device and to perform other operations in the chip, while writing/erasing some of the devices. Recently, a poly-Si reconfigurable device with a bottom gate array was also demonstrated and showed nonvolatile functionality. [14] In this work, the first demonstration of individually addressable nonvolatile RFETs based on bottom-up grown Si nanowire is presented. Figure 1 shows a schematic design and a crosssectional transmission electron micrograph (TEM) image of the fabricated and measured device. We make use of charge trapping in the gate stack of a dedicated gate electrode. As a vehicle to verify our proof of principle, we integrated the technologically lean charge trapping metal-nitride-oxide-silicon (MNOS) gate stack. The validity of the MNOS stack for nonvolatile charge storage, in general, is well accepted in the memory community. [15,16] For simplicity, in demonstrating the concept, we use a rather thick Si 3 N 4 layer of 15 nm and omit the use of a top blocking oxide. In this configuration, the top part of the thick trapping layer has the same electrostatic function as the blocking oxide in the silicon-oxide-nitride-oxide-silicon Reconfigurable transistors merge unipolar p-and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of ...

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Reconfigurable nanowire electronics – A review

Cited by 88 publications

References 26 publications

Novel Approach To Synthesis of Logic Circuits Based on Multifunctional Components

Novel Approach To Synthesis of Logic Circuits Based on Multifunctional Components

Progress in Materials for Microelectronics and Further Challenges

Reconfigurable Si Nanowire Nonvolatile Transistors

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