Recombination pathways and hole leakage behavior in InGaN/GaN multiple quantum wells with V-shaped pits

Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer*

“…Nevertheless, the inserted n-AlGaN with a higher energy barrier can effectively suppress hole leakage, which may be the reason for the improved luminous efficacy of sample B at high current density regimes. [17] The semi-logarithmic scale current-voltage (I-V ) curves for both samples are shown in Fig. 2(b).…”

Evaluating the performance of an AlGaN based deep ultraviolet laser diode using graded waveguide layer and graded cladding layer

“…Meanwhile, the effect of silicon doping on the structural properties of AlGaN/GaN multiple quantum well layers grown on GaN was investigated [12]. However, with the continuous increase in Al composition and the limited technology for the epitaxial growth of materials, highquality AlGaN materials are difficult to prepare [13,14]; Besides, the ionization energy of the Mg acceptor in P-AlGaN is enhanced, making it difficult to dope and activate of highly transparent Mg-referenced p-AlGaN materials, thus affecting device performance [15][16][17]. However, Yun et alimproved the light extraction efficiency of the LED device by introducing cone-shaped pillars and cylindrical air holes in the highly transparent AlGaN layer at 280 nm [18].…”

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

“…However, due to the high dislocation density in AlGaN materials, spontaneous and piezoelectric polarization field effects, and weak carrier confinement, DUV-LDs with wavelengths less than 280 nm still have the problems of low hole concentration, serious carrier leakage, and low radiation recombination rate and output power [12][13][14]. The use of electron blocking layer (EBL) and hole blocking layer (HBL) can reduce carrier leakage, increase recombination rate, and optimize the performance of devices [15]. To solve the above problems, Xing et al proposed inverted trapezoidal EBL to reduce the electron leakage in the p-type region [16], Wang et al proposed graded EBL to improve the radiative recombination rate in the quantum wells (QWs) of DUV-LDs [17], and Yi et al proposed the specially designed AlGaN superlattice EBL and HBL based on rectangular superlattice (RSL) EBL and HBL [18]; then, they design AlGaN grade superlattice EBL and HBL to improve the performance of UV light-emitting diodes [19].…”