Recombination mechanisms and band alignment of GaAs<sub>1−x</sub>Bi<sub>x</sub>/GaAs light emitting diodes

Hossain, Nadir; Marko, Igor P.; Jin, S. R.; Hild, K.; Sweeney, S. J.; Lewis, Ryan B.; Beaton, D. A.; Tiedje, T.

doi:10.1063/1.3681139

Cited by 64 publications

(48 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…III E, we consider the band edge alignment in compressively strained GaBi x As 1−x /GaAs samples. The band alignment at the GaBi x As 1−x /GaAs interface remains uncertain in the literature with reports suggesting that the conduction band offset is of type-I, 2,20,21 or type-II, 14 or nearly flat. 22 Our calculations support a type-I band alignment for all the samples considered.…”

Section: Introductionmentioning

confidence: 99%

Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

Usman¹,

et al. 2013

View full text Add to dashboard Cite

The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E g ) accompanied with a large increase in the spin-orbit splitting energy ( SO ), leading to the condition that SO > E g , which is anticipated to reduce hot-hole producing Auger recombination losses whereby the energy and momentum of a recombining electron-hole pair are given to a second hole which is excited into the spin-orbit band. We theoretically investigate the electronic structure of experimentally grown GaBi x As 1−x samples on (100) GaAs substrates by directly comparing our data with room temperature photomodulated reflectance (PR) measurements. Our atomistic theoretical calculations, in agreement with the PR measurements, confirm that E g is equal to SO for x ≈ 9%. We then theoretically probe the inhomogeneous broadening of the interband transition energies as a function of the alloy disorder. The broadening associated with spin-split-off transitions arises from conventional alloy effects, while the behavior of the heavy-hole transitions can be well described using a valence bandanticrossing model. We show that for the samples containing 8.5% and 10.4% Bi the difficulty in identifying a clear light-hole-related transition energy from the measured PR data is due to the significant broadening of the host matrix light-hole states as a result of the presence of a large number of Bi resonant states in the same energy range and disorder in the alloy. We further provide quantitative estimates of the impact of supercell size and the assumed random distribution of Bi atoms on the interband transition energies in GaBi x As 1−x . Our calculations support a type-I band alignment at the GaBi x As 1−x /GaAs interface, consistent with recent experimental findings.

show abstract

Section: Introductionmentioning

confidence: 99%

Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

Usman¹,

et al. 2013

View full text Add to dashboard Cite

show abstract

“…When both N and Bi are used, it is possible to independently control CB and VB in GaAsNBi, and thus extend light emission wavelength very efficiently. Other beneficial properties when using Bi include large spin-orbit (SO) split band [46,47], less temperature sensitive bandgap [32,48,49], minor influence on both electron [50] and hole mobility [51] for small Bi concentrations, enhancement of PL intensity [44] and surfactant effect ensuring smooth surface [52], etc. Sweeney and Jin proposed theoretically that GaAsNBi is promising for efficient near IR light emitting devices [53].…”

Section: Theoretical Predictionmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

View full text Add to dashboard Cite

Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

show abstract

“…The band configuration of GaAsBi/GaAs is highly controversial. Tight binding band calculation of GaAsBi based on photoreflectance result suggests that GaAsBi/GaAs has the type I band configuration [20,21]. Very short decay time (70 ps) obtained by time resolved PL for a single 7.5-nm-thick GaAsBi QW at RT implies that it may have the type I band configuration.…”

Section: IIImentioning

confidence: 99%

Growth of GaAsBi/GaAs Multi Quantum Wells on (100) GaAs Substrates by Molecular Beam Epitaxy

Pallavi

Tatebe

Nabara

et al. 2015

e-J. Surf. Sci. Nanotech.

View full text Add to dashboard Cite

Multi-quantum wells (MQWs) consisting of 3 or 3.5 pairs of nominally 8.8-nm-thick GaAs layers and 5.6-nmthick GaAs0.97Bi0.03 were grown by molecular beam epitaxy with varying the growth temperature of GaAs layers, TGaAs, and keeping the growth temperature of the GaAsBi layers at 350• C and their Bi compositional structure and optical properties were investigated. Analysis of x-ray diffraction spectra reveals that 67% of the total Bi atoms supplied during growth of a single GaAsBi layer were segregated on the growing surface and were incorporated into the successive GaAs layer at TGaAs = 350• C. The GaAs layers at TGaAs = 450 and 500• C contained 17% of the Bi atoms totally supplied and 50% of them were evaporated. Almost all Bi atoms segregated during growth of GaAsBi evaporated and were not incorporated into the GaAs layer at TGaAs = 550• C or higher. Photoluminescence (PL) spectra at 13 K shows all MQW samples have good optical quality and the MQW sample grown at TGaAs = 550• C shows the longest wavelength emission peak at 1116 nm which is 44 nm longer than the PL wavelength for the MQW grown at TGaAs = 350• C, even though the tremendous reduction of Bi incorporation into the GaAs layer grown at TGaAs = 550• C. The result strongly suggests that GaAsBi/GaAs has the type II band configuration.

show abstract

Recombination mechanisms and band alignment of GaAs_1−xBi_x/GaAs light emitting diodes

Cited by 64 publications

References 19 publications

Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Growth of GaAsBi/GaAs Multi Quantum Wells on (100) GaAs Substrates by Molecular Beam Epitaxy

Contact Info

Product

Resources

About

Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes

Cited by 64 publications

References 19 publications

Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Growth of GaAsBi/GaAs Multi Quantum Wells on (100) GaAs Substrates by Molecular Beam Epitaxy

Contact Info

Product

Resources

About

Recombination mechanisms and band alignment of GaAs_1−xBi_x/GaAs light emitting diodes