Recombination lifetime of InxGa1−xAs ternary alloys

Ahrenkiel, R. K.; Wangensteen, T.; Al‐Jassim, Mowafak; Wanlass, M. W.; Coutts, T. J.

doi:10.1063/1.47050

Cited by 9 publications

(2 citation statements)

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“…Gallant and Zemel 3 measured the diffusion length in undoped n-type InGaAs (ϳ1ϫ10 15 cm Ϫ3 ) and, from that, deduced a hole lifetime of 18.5 s. Early work by this group compared the lifetime of undoped and heavily doped ͑n type, 1ϫ10 18 cm Ϫ3 ͒ InGaAs that was both lattice matched and mismatched with a grading layer to InP. 4 Recent work by this group described the lifetime in undoped InGaAs double heterostructures ͑DHs͒ that were grown on misoriented substrates producing Cu-Pt-type ordering of the In-Ga sublattice. 5 Here, we grew isotype double heterostructures of both n-and p-type InGaAs on Fe-doped InP, ͓͑100͒ 2°t oward ͑110͔͒ oriented substrates by metal-organic chemical vapor deposition.…”

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Recombination lifetime of In0.53Ga0.47As as a function of doping density

Ahrenkiel

Ellingson

Johnston

et al. 1998

Applied Physics Letters

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172

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We have fabricated devices with the structure InP/In 0.53 Ga 0.47 As/InP, with a InGaAs doping range varying from 2ϫ10 14 to 2ϫ10 19 cm Ϫ3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley-Read-Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative-and Auger-recombination coefficients are deduced.

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confidence: 99%

Recombination lifetime of In0.53Ga0.47As as a function of doping density

Ahrenkiel

Ellingson

Johnston

et al. 1998

Applied Physics Letters

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172

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“…Recent work has measured the recombination lifetime in disordered InGaAs [5] epitaxial thin films that are mismatched to InP. The lifetime decreased with mismatch as recombination at dislocations dominates the recombination process.…”

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Carrier Transport in Ordered and Disordered In_0.53Ga_0.47As

Ahrenkiel

Arent

et al. 1996

MRS Proc.

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Ga0,47In0.53As films are grown by metal-organic chemical vapor deposition (MOCVD) on InP substrates and are lattice-matched to the latter. Studies have shown that by varying growth temperature and lattice orientation, some ordering of the metal sublattice is produced. In this work, we studied the excess carrier lifetimes in ordered and disordered films using an ultra-high frequency photoconductive decay measurement technique (UHFPCD). Excitation was provided by a Q-switched YAG laser (1.064 •ts wavelength) with pulses of about 5 ns full width half maximum (FWHM). The transient photoconductive decay (PCD) signals varied markedly with the degree of ordering of the specific film. As description of the experimental results of these UHFPCD measurements follow.

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