Recombination lifetime of In0.53Ga0.47As as a function of doping density

Ahrenkiel, R. K.; Ellingson, Randy J.; Johnston, Steve; Wanlass, M. W.

doi:10.1063/1.121669

Cited by 172 publications

(80 citation statements)

References 10 publications

(5 reference statements)

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“…The lower radiative recombination efficiency of the n + InGaAs layer is associated with increased Auger recombination [40]. This is in strong agreement with observations made by Ahrenkiel and co-workers, showing that Auger recombination becomes the dominant recombination mechanism for doping densities greater than 5x10 18 cm −3 in InGaAs [41].…”

Section: Low Temperature Photoluminescence Spectroscopysupporting

confidence: 80%

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Jacobs

Stevens

Hogg

2016

IEICE Trans. Electron.

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SUMMARYHigh structural perfection, wafer uniformity, and reproducibility are key parameters for high-volume, low cost manufacture of resonant tunnelling diode (RTD) terahertz (THz) devices. Low-cost, rapid, and non-destructive techniques are required for the development of such devices. In this paper, we report photoluminescence (PL) spectroscopy as a non-destructive characterisation technique for high current density InGaAs/AlAs/InP RTD structures grown by metal-organic vapour phase epitaxy (MOVPE) for THz applications. By using a PL line scanning technique across the edge of the sample, we identify characteristic luminescence from the quantum well (QW) and the undoped/n + InGaAs layers. By using the Moss-Burstein effect, we are able to measure the free-electron concentration of the emitter/collector and contact layers in the RTD structure. Whilst the n + InGaAs luminescence provides information on the doping concentration, information on the alloy composition and compositional variation is extracted from the InGaAs buffer layer. The QW luminescence provides information on the average well width and provides a monitor of the structural perfection with regard to interface and alloy disorder.

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Section: Low Temperature Photoluminescence Spectroscopysupporting

confidence: 80%

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Jacobs

Stevens

Hogg

2016

IEICE Trans. Electron.

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“…However, over 2 × 10 17 cm −3 , the dark current starts rising. The reasons are that the effective lifetime is dominated by SRH recombination, whose lifetime is independent with the doping concentration (Ahrenkiel et al 1998), at the rather low doping concentration. Thus, at this stage the effective lifetime is a constant.…”

Section: Resultsmentioning

confidence: 98%

Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode

Wang

Chen

et al. 2008

Opt Quant Electron

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“…The proportionality constant R 0 (CCCH), etc. were determined so that the calculated results agree with experimental values [36][37][38].…”

Section: Quantitative Answer To Faq 4: Carrier Thermalizationmentioning

confidence: 94%

Requisites for Highly Efficient Hot-Carrier Solar Cells

Takeda

2013

Lecture Notes in Nanoscale Science and Technology

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We have constructed new models based on detailed balance of particle and energy fluxes to clarify the operating principle of hot-carrier solar cells (HC-SCs) and find the requisites for high conversion efficiency. Energy dissipation due to thermalization of photogenerated carriers can be significantly reduced, even though the thermalization time is not sufficiently long. Instead, the energy dissipation related to entropy generation associated with hot-carrier extraction is remarkable. The thermalization time must be several nanoseconds to exceed the Shockley-Queisser limit under the 1 sun solar irradiation and over 10 ns to compete against triple-junction solar cells at 1,000 sun. The other requisites unique to hot-carrier extraction are a short carrier equilibration time being around one-thousandth of the thermalization time, and an energy-selection width of energy-selective contacts (ESCs) for mono-energetic carrier extraction, which is needed to match the quasi-Fermi levels in the hot absorber and in the cold electrodes, being narrower than 0.1 eV. It seems extremely challenging to fulfill all the requisites, although investigations for material development as well as new concepts for post conventional HC-SCs are underway. IntroductionIn a conventional solar cell, a photon whose energy is higher than the bandgap of the light-absorbing material used in the cell is absorbed to generate a carrier with an energy equal to the photon energy. However, carrier energies in excess of the bandgap of the absorber immediately dissipate by emitting phonons whose temperature equals the room temperature, namely, thermalization of carriers occurs within several picoseconds in most cases. Therefore, the excess carrier energies cannot be

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Recombination lifetime of In0.53Ga0.47As as a function of doping density

Cited by 172 publications

References 10 publications

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode

Requisites for Highly Efficient Hot-Carrier Solar Cells

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