Recombination in μc-Si:H pin solar cells

Lips, K.; Boehme, Christoph; Fuhs, W.

doi:10.1016/j.jnoncrysol.2004.03.060

Cited by 6 publications

(6 citation statements)

References 15 publications

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“…From the onset the development of pEDMR was driven by applications to thin-film Si materials 29,[38][39][40][41][42][43][44][45][46] and solar cells. [47][48][49][50] More recently the approach has been extended to their organic counterparts.…”

Section: Klaus Lipsmentioning

confidence: 99%

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

Schnegg

Behrends

Fehr

et al. 2012

Phys. Chem. Chem. Phys.

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In thin film solar cells based on non-crystalline thin film silicon or organic semiconductors structural disorder leads to localized states that induce device limiting charge recombination and trapping. Both processes frequently involve paramagnetic states and become spin-dependent. In the present perspectives article we report on advanced pulsed electrically detected magnetic resonance (pEDMR) experiments for the study of spin dependent transport processes in fully processed thin film solar cells. We reflect on recent advances in pEDMR spectroscopy and demonstrate its capabilities on two different state of the art thin film solar cell concepts based on microcrystalline silicon and organic MEH-PPV:PCBM blends, recently studied at HZB. Benefiting from the increased capabilities of novel pEDMR detection schemes we were able to ascertain spin-dependent transport processes and microscopically identify paramagnetic states and their role in the charge collection mechanism of solar cells.

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Section: Klaus Lipsmentioning

confidence: 99%

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

Schnegg

Behrends

Fehr

et al. 2012

Phys. Chem. Chem. Phys.

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“…9,10 Dark J-V characteristics of single c-Si: H based p-i-n devices have also been studied in the literature but in less extent than in case of a-Si: H based devices. [11][12][13][14] The current at low forward voltages is a strong function of the silane ͓SiH 4 ͔ concentration ͑SC͒, defined as SC = ͓SiH 4 ͔ / ͓͑SiH 4 ͔ + ͓H 2 ͔͒, used in the gas phase to deposit in the intrinsic layer, the current being lower for higher values of SC. 12,13 The current at low forward voltages for these devices is always higher than in a-Si: H based p-i-n devices due to the lower band gap of c-Si: H ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

“…12-14͒ that strongly favors recombination. The high forward regime is claimed to be limited by series resistance according to the literature 11,12 but contact effects could also limit the current. 14 In this paper we explore using computer simulations the transport mechanisms existing in the dark J-V of micromorph silicon tandem cells.…”

Section: Introductionmentioning

confidence: 99%

Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

Sturiale

Li²,

Rath³

et al. 2009

Journal of Applied Physics

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The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions: two with an exponential dependence and a third where the current grows more slowly with the applied voltage. In the first exponential region the current is entirely controlled by recombination through gap states of the top cell. In the second exponential region the current is controlled by the mixture of recombination through gap states of both the top and bottom cells and by free carrier diffusion along the a-Si: H intrinsic layer. In the third region the onset of the electron space charge limited current on the a-Si: H top cell can be observed along with some other mechanisms that are discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole pairs generated under illumination in the top and bottom cells. The dark current at high forward voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the recombination junction.

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“…In addition, EDMR is regarded as one of the key technologies to realize quantum computing algorithms based on coherent manipulation and readout of electron spins in semiconductor samples [9][10][11][12]. Due to its high selectivity and sensitivity, EDMR is ideally suited for the assignment and structural characterization of paramagnetic states determining charge transport and loss mechanisms in organic and Si solar cells [13][14][15][16][17][18][19][20]. Recently, it was shown that the application range of EDMR as compared to continuous wave (CW EDMR) may be further boosted by pulsed (pEDMR) detection schemes [9,11,[21][22][23][24][25][26], which greatly increased the selectivity to different spin-dependent transport mechanisms and spin coupling parameters as well as the spectral resolution [27][28][29][30][31][32][33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells

Akhtar

Schnegg

Veber

et al. 2015

Journal of Magnetic Resonance

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Here we describe a new high frequency/high field continuous wave and pulsed electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating at 263 GHz and resonance fields between 0 and 12 T. Spin dependent transport in illuminated hydrogenated amorphous silicon p-i-n solar cells at 5 K and 90 K was studied by in operando 263 GHz CW and pEDMR alongside with complementary X-band CW EDMR. Benefiting from the superior resolution at 263 GHz, we were able to better resolve EDMR signals originating from spin dependent hopping and recombination processes. 5 K EDMR spectra were found to be dominated by conduction and valence band tale states involved in spin dependent hopping, with additional contributions from triplet exciton states. 90 K EDMR spectra could be assigned to spin pair recombination involving conduction band tail states and dangling bonds as dominating spin dependent transport process, with additional contributions from valence band tail and triplet exciton states.

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Recombination in μc-Si:H pin solar cells

Cited by 6 publications

References 15 publications

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells

Exploring dark current voltage characteristics of micromorph silicon tandem cells with computer simulations

CW and pulsed electrically detected magnetic resonance spectroscopy at 263 GHz/12 T on operating amorphous silicon solar cells

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