Recombination Emission in InSb

Abstract

Optically excited recombination emission has been studied for n-and p-type single-crystal samples of InSb at 77 and 4.2°K. Emissions associated with band-to-band transitions, transitions with creation of an optical phonon, and transitions involving acceptor impurities have been observed. The band-to-band emission in the pure samples can be attributed to direct transitions, whereas the emission in samples of high donor concentrations clearly shows transitions violating wave-vector conservation. The emission of phononassisted transitions is about 150 times weaker than that of direct transitions; this ratio is consistent with the strength of polar-mode coupling. The »-type as well as the p-type samples show an emission band due to electron transitions from the conduction band to some impurity level at 7.5 meV above the valence band, and the emission is much more prominent in the Zn-doped samples. Germanium-doped p-type samples show a weak emission band associated with an acceptor level at 17 meV above the valence band. Samples of large donor concentrations show the effect of band tailing. The main impurity emission increases linearly while the band-to-band emission increased quadratically with the intensity of exciting light. From the shift and splitting of the emission under applied magnetic field, an electron effective mass of w e M).018m and an electron g factor of | g | = 40 at 30 kG are obtained. Electroluminescence has been observed in />-type crystals under pulsed electric fields of ^60 V/cm. The observed spectrum appears to be a broadened impurity line. The emission is more than an order of magnitude weaker than optically excited emission corresponding to the same sample conductance. 5 R.

Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP

“…Still, the "hot hole" stationary state seems to be highly improbable, even though the decreasing ratio τ rad /τ ǫ can have an effect of reducing the spectral filtering. Such a reduction was experimentally observed [35] in the standard reflection geometry for low-temperature (78 K and below) emission from InSb. Quantitative account of this effect requires a separate study, but qualitatively it would explain the blue shift of the experimental line maxima at low temperatures compared to their position calculated using Eq.…”

Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor deposition

“…The reason for attributing this peak to phonon-assisted emission by previous report is because the energy separation between this peak and the intrinsic emission peak is close to the calculated optical phonon energy in InSb [21]. There are several reports on the impurity related emission with energies at 0.230, 0.228, 0.225 and 0.224 eV [22][23][24].…”

Growth and luminescence characteristics of undoped LaCl3 crystal by Modified Bridgman Method

“…A 'red shift' in body emission to surface emission can be found when optical transmittance of the scintillator is not good enough, especially the absorption band locates at the peak of scintillation spectrum. This red shift is known as the self-absorption effect of the scintillation materials [8,[10][11][12]. In this work, however, the crystal we produced had very good optical transmittance and no absorption band located between 300 and 650 nm was found.…”

“…In the PL experiment, incident photons shot at the surface of the sample and luminescence directly from the surface (a few atoms depth) of the crystal was recorded and contributed the most to the emission spectrum. It is worthy to note that PL spectra from the surface (hereafter, 'surface emission') and inner part (hereafter, 'body emission') of the crystal are different with the body emission shifting to red [8,11,12] when self-absorption exists. A schematic of the measurement setup can be found in reference [10].…”