Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP

Abstract

The shape of the photoluminescence line excited at an edge face of InP wafer and registered from the broadside is used to investigate the intrinsic emission spectrum. The procedure is much less sensitive to the surface properties and the carrier kinetics than the conventional methods used with the reflection or transmission geometry of photoluminescence. Our method provides a tool for studying the effects of non-equilibrium distribution of minority carriers in doped direct-band semiconductors.

A Unified Pervasive Linebroadening Function for Quantum Wells in Light Emitting Diodes

“…Instead of perfect and abrupt bands, in measurements, semiconductors usually show more or less exponential band edges. Exponential Urbach tail is a usual absorption edge behavior in disordered solids and often met also in the emission and absorption spectra of semiconductor materials [4][5][6][7][8]. It is also common in the electroluminescent (EL) and photoluminescent (PL) spectra of quantum well LEDs [9][10][11][12].…”

“…Figure 3.Simulation for the homogeneous broadening in a qw-LED, using Equation(10) and inhomogeneous line according to Equation(8) with parameters:…”