Recombination Currents in Light-Emitting Diodes based on (Al x Ga1–x )0.5In0.5P/(Al y Ga1–y )0.5In0.5P Multiple Quantum Wells

Charge Carrier Transport in LEDs Based on Multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells

“…2. Similar to the results of previous work [3], there are three different parts in the current-voltage characteristics. In the first part, the CV-characteristic is described by an exponential dependence…”

“…For the coefficient I 0 , the activation energy is E 0 = 1.77-2.12 eV, which is close to the band-gap width of quantum wells. According to the previous results, in this part of the CV-characteristic, current is limited by the process of radiative recombination [3].…”

“…These values are close to the half-widths 1.91 and 2.04 eV of the band gaps of the red and yellow LEDs, respectively, in the region of quantum wells. An analysis of the results showed that in the first part of the CV-characteristic, the current is limited by the nonradiative recombination process [3]. The second part of the CV-characteristic is described by an exponential dependence of the form (1) with the other values of the factor n and coefficient I 0 .…”

“…Large number of heterojunctions in such structures should result in a complex nature of charge transport, which manifests itself, in particular, in the limitation of the forward current and in an increase in the forward voltage. However, it was previously shown that in interpretation of forward current-voltage (CV) characteristics, one can use the most simplest formulas derived for the case of the recombination and diffusion currents in homojunctions [2,3]. This paper is aimed at an experimental study of forward current-voltage characteristics of LEDs based on MQWs with different parameters of an active region (the number of quantum wells and their composition).…”

Electron Irradiation Degradation of AlGaInP/GaAs Light‐Emitting Diodes

“…The initial forward current‐voltage characteristics of the AlGaInP/GaAs diodes are presented on the semi‐log scale at the temperature range of 16–300 K in Figure . It is known that the basic junction theory for these diodes predicts that the forward CVC can be described by the Equation Here, j ( V , T ) is the total current; E a is the thermal process activation energy, which is close to the semiconductor band gap E g in the LED active region; n 0 is the constant which is determined by the carrier transport mechanism, and can be equal to 1–2; n is the ideality factor, j S 0 is the constant and R S is the series resistance of the LED structure (passive regions or contact resistance). The other parameters in Equation have their usual meanings.…”