Electron Irradiation Degradation of AlGaInP/GaAs Light‐Emitting Diodes

Brudnyi, V. N.; Prudaev, I. А.; Oleinik, V. L.; Marmaluk, A. A.

doi:10.1002/pssa.201700445

Cited by 4 publications

(3 citation statements)

References 23 publications

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“…The two-layer epitaxial structure of GaP is obtained by the method of liquid-phase epitaxy in a single technological cycle. GaP refers to indirect-gap semiconductors, in which the probability of interband transitions that occur with conservation of momentum is negligible, so radiative recombination occurs, as a rule, through impurity centers [16][17][18][19][20].…”

Section: Methodsmentioning

confidence: 99%

Changing the Shape of Watt-Ampere Characteristic of LEDs Based upon GaP (λ = 590 nm) Irradiated by Gamma-Quanta

Градобоев

Orlova

Simonova

2019

MSF

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There are two distinctive regions can be identified (low (LC) and high currents (HC)) of a watt-ampere (W-I) characteristic of initial LEDs based upon GaP with 590 nm wavelength. The established patterns differ in the exponent. At the same time, the LC region corresponds to an increase in the efficiency of conversion of operating current into light radiation, and the HC region is a slow decline with an increase in the operating current. As a result of irradiation with gamma-quanta in the passive power mode, the change in the shape ofW-Icharacteristic is established, which can be characterized by an increase in the threshold current separating the LC and HC regions with an increase in the irradiation dose. The change in the emissive power of the LEDs and the shift of the threshold current occurs in two stages: in the first stage, the emissive power decreases due to radiation-stimulated rearrangement of the initial defect structure. At the same time, with an increase in the radiation dose, a partial recovery of the emissive power is observed against the background of its overall decrease. At the end of the first stage, the dependence of the damage coefficient on the operating current density in measurements of theW-Icharacteristics is manifested explicitly. The second stage of reducing the emissive power due to the introduction of radiation defects. In this case, the damage coefficient does not depend on the working current density, and the observed differences are due to the fact that by the end of the first stage its contribution to the overall reduction in emissive power is inversely proportional to the working current density. The established patterns can be used at the stage of designing the LEDs to substantiate the choice of the optimal value of the operating current density and to predict the resistance to irradiation with gamma rays.

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Section: Methodsmentioning

confidence: 99%

Changing the Shape of Watt-Ampere Characteristic of LEDs Based upon GaP (λ = 590 nm) Irradiated by Gamma-Quanta

Градобоев

Orlova

Simonova

2019

MSF

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“…Light-emitting diodes (further LEDs) based on AlGaInP heterostructures with multiple quantum wells (further MQW) are widely used in the nuclear industry, nuclear power engineering and space research [1][2][3][4][5][6]. Under operating conditions, they are affected by significant effects of various types of ionizing radiation, for example, in space conditions or nuclear power facilities.…”

Section: Introductionmentioning

confidence: 99%

Phenomenological Model of Radiation Hardness of LEDs Based on AlGaInP Heterostructures with Multiple Quantum Wells

Градобоев

Orlova

Simonova

2019

MSF

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Neutron degradation of LEDs based upon AlGaInP heterostructures (λ=630 nm and λ=590 nm) with multiple quantum wells are presented in the article. For the initial red LED (λ=630 nm) we can clearly distinguish three characteristic regions. In the small current region a low electron injection mode into the active region of the LEDs is observed. Further, as the operating current goes up, there are average and high electron injection in the active LEDs area regions. However, for the LEDY, the difference in the average and high electron injection regions is more pronounced and low electron injection region is absent. The boundary between the average and high electron injection regions can be characterized by the boundary current, which goes up with increasing exposure level. Three regions of electron injection in the active area of LEDs: low, average and high electron injection are illustrated for both types of LEDs under fast neutron irradiation. Based on the established relationships describing the emission power changing, a phenomenological model of the radiation hardness of LEDs based on AlGaInP heterostructures with MQW was shown. The LEDs radiation hardness is determined by the boundary current value, emission power in the low electron injection into the active LEDs area, the initial defective structure.

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“…Nowadays knowledge about the impact of ionizing irradiation on the LEDs is fragmented [6][7][8][9]. It is necessary to know the basic patterns of changes in the key factors of the LEDs during ionizing radiation in order to guarantee the required parameters of ionizing radiation resistance [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Influence of Built-in Electric Fields on the Gallium Phosphide- Based LEDs Hardness to Gamma-Ray Irradiation

Orlova¹,

Simonova²,

Градобоев³

2022

IJETAE

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The paper shows the influence of the power supply mode (without – ―M-B‖ and with the separation of electron-hole pairs – ―M-CC‖ generated by irradiation in the built-in electric field of the pn-junction of light-emitting diodes) on the LEDs emission power changing under gamma quanta. LEDs were based on monocrystalline gallium phosphide. The maximum radiation wavelength is at 655 nm. It is shown that the division of electron-hole pairs in the field of a built-in pn-junction makes it possible to significantly increase their stability. The emission power decreasing as a result of irradiation with gamma quanta is described in three stages. The first stage is due to the radiation-stimulated rearrangement of the first initial defect (complex of defects) of the first type. At the second stage, the decrease in power is due to the radiation-stimulated rearrangement of the initial defect (complex of defects) of the second type. In this case, the separation of electron-hole pairs generated during irradiation leads to a significant LEDs hardness increasing to the of gamma quanta action. At the third stage, the emission power decreasing is due to the only radiation defect’s introduction. For each of the identified stages of emission power reducing, empirical relationships, that describe the emission power changing with the radiation dose increasing and damage factors for the irradiation modes are numerically determined. Keywords— Radiation hardness, LEDs, GaP, gamma quanta, emission power.

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Electron Irradiation Degradation of AlGaInP/GaAs Light‐Emitting Diodes

Cited by 4 publications

References 23 publications

Changing the Shape of Watt-Ampere Characteristic of LEDs Based upon GaP (λ = 590 nm) Irradiated by Gamma-Quanta

Changing the Shape of Watt-Ampere Characteristic of LEDs Based upon GaP (λ = 590 nm) Irradiated by Gamma-Quanta

Phenomenological Model of Radiation Hardness of LEDs Based on AlGaInP Heterostructures with Multiple Quantum Wells

Influence of Built-in Electric Fields on the Gallium Phosphide- Based LEDs Hardness to Gamma-Ray Irradiation

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