Recoil spectrometry of thin film reactions in the Pd/InP system

Abstract

High resolution electron energy loss spectroscopy study of vapor deposited pyromellitic dianhydride and oxydianiline films on Cu (110) Interfacial reactions between ͑100͒ InP and Pd were investigated as part of a systematic study aimed at investigating the stability of planar nonalloyed metallizations to InP. A 50-nm-thick Pd film was deposited on an InP substrate, and parts of it were subsequently thermally treated for 30 min at temperatures varying from 100 to 500°C in steps of 50°C. Separate characterizations of the Pd, In, and P depth distributions were obtained using mass and energy dispersive recoil spectrometry. The different phases were determined using x-ray diffraction, and scanning electron microscopy was used to study the surface topography. It is assumed that the interaction starts in the as-deposited sample, and definite formation of a ternary phase with the suggested composition Pd 5 In 2 P 2 starts at an annealing temperature of 100°C. At 250°C all Pd is chemically reacted. Preferential outdiffusion of P leads to a loss of P from the surface at 500°C, and the only phase observed in the x-ray diffraction spectrum from the surface is PdIn.

Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction

“…At 300°C, there are several alloys formed between the Pd, Pt, and InGaAsP, such as PtAs 2 , PtGa, PtIn, PtP 2 , Pd 5 (InP) 2 , and Pd 5 (GaAs) 2 . 2,5 If there is sufficient Pd to alloy with the Pt, the Pt alloys may be avoided, resulting in a smoother diffusion profile. As noted from the RBS data, the Pd and Pt were always found at the same depth after anneal- Table I, after 300°C anneal.…”

“…These particular metals were chosen, since they are commonly used for ohmic contacts in III-V materials. [2][3][4][5][6] Pt and Ti tend to have a fairly smooth diffusion profile when annealed at our maximum processing temperature of 300°C. [2][3][4] Although Pd and Au have rougher diffusion profiles, some work has indicated that if they are thin enough, they may also be used.…”

“…[2][3][4][5][6] Pt and Ti tend to have a fairly smooth diffusion profile when annealed at our maximum processing temperature of 300°C. [2][3][4] Although Pd and Au have rougher diffusion profiles, some work has indicated that if they are thin enough, they may also be used. 5 Furthermore, Pt is an excellent diffusion barrier to Au at our processing temperature of 300°C, provided it is thick enough to avoid pinholes or other defects, so Au can be used as the top metal for all of the subsequent interconnects.…”

Why Can Smart Cut® Change the Future of Microelectronics?

“…14 This good contact resistance is due to the formation of a PdiSi silicide and different phases, such as Pd 5 In 2 P2 or Pd 4 GaAs, for example, with two major compound semiconductors. 15 Using Pd as an intermediate layer for bonding offers the advantage of both a good bonding strength and also the possibility of using this buried metal to minimize the resistance between the different layers. For example, the vertical resistance between GaAs and silicon using palladium-to-palladium bonding has been shown to exhibit very low resistance.…”