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1997
DOI: 10.1080/10408439708241259
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Reciprocal space mapping

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Cited by 130 publications
(86 citation statements)
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“…These two effects may be distinguished by measuring a RSM around an asymmetrical Bragg reflection. [18] Fig. 2 d) shows that w x increases considerably for snapshots recorded after the reflection of the strain wave at the sample surface.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…These two effects may be distinguished by measuring a RSM around an asymmetrical Bragg reflection. [18] Fig. 2 d) shows that w x increases considerably for snapshots recorded after the reflection of the strain wave at the sample surface.…”
mentioning
confidence: 99%
“…This allowed for detecting symmetrically and asymmetrically diffracted x-ray photons at the same time, avoiding time-consuming mesh scans in order to measure reciprocal space maps (RSM) around specific Bragg reflections. [18][19][20][21] Consequently, we acquired information both on in-and out-of-plane structure dynamics utilizing this time-resolved version of reciprocal-space mapping. The temporal overlap of the optical pump and x-ray probe pulses was determined in an independent cross-correlation experiment [22] and was set to the delay 0 ps.…”
mentioning
confidence: 99%
“…Before the first demonstration of CDI, researchers were using the technique of reciprocal space mapping (RSM) to collect as much information about the diffracting sample as possible. 105 RSM involves the collection of Bragg reflections on the crystal rocking curve at very high angular resolution. RSM shares many common characteristics with the last technique we will discuss in this review, that of BCDI.…”
Section: Bragg Coherent Diffractive Imaging (Bcdi) Basic Principle Anmentioning
confidence: 99%
“…An alloy's bandgap is determined from previously established empirical relationships linking E gap and alloy composition (0 ≤ x,y ≤ 1) to the values of the lattice parameters measured by x-ray diffraction. High-resolution x-ray diffraction (HRXRD) reciprocal space mapping (RSM) directly measures the in-plane and out-of-plane lattice parameters, strain, and the diffuse x-ray scattering from multilayered semiconductor heterostructures [3][4]. The technique was recently used to characterize strain-relaxation in linear and step-graded InP 1-x As x and In 1-z Al z As buffers grown by molecular beam epitaxy (MBE) [5][6][7].…”
Section: Introductionmentioning
confidence: 99%