Triple-axis X-ray Reciprocal Space Mapping of In(y)Ga(1-y)As Thermophotovoltaic Diodes Grown on (100) InP Substrates

Dashiell, M; Ehsani, H; Sander, P; Newman, F; Wang, C; Shellenbarger, Z; Donetski, D; Gu, N; Anikeev, S

doi:10.2172/881296

Cited by 1 publication

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“…Firstly, the epilayer diffraction peak broadening along the mosaic direction means that mosaic blocks are present, which slightly rotate the allowable diffraction planes in their vicinity. 19,20 Secondly, the diffraction peak broadening along the [110] direction indicates that the lateral correlation length is limited, which can be related to an average crystallite size that exhibits coherent diffraction. 21,22 The diffraction peak broadening of the as-grown In 0.3 Ga 0.7 As film grown on the 4-nm-thick In 0.6 Ga 0.4 As buffer layer indicates that the 4 nm amorphous In 0.6 Ga 0.4 As buffer layer cannot effectively reduce the lattice mismatch between the In 0.3 Ga 0.7 As epilayer and the GaAs substrate.…”

Section: Resultsmentioning

confidence: 99%

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Gao

Lei

et al. 2014

CrystEngComm

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The effects of the thickness of the large-mismatched amorphous In 0.6 Ga 0.4 As buffer layer on In 0.3 Ga 0.7 As epi-films grown on a GaAs substrate have been systematically investigated. The In 0.3 Ga 0.7 As films with the In 0.6 Ga 0.4 As buffer layer of 0, 1, 2, and 4 nm thickness are grown by low-temperature molecular beam epitaxy (LT-MBE) and are characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the degree of relaxation and the crystallinity of the as-grown In 0.3 Ga 0.7 As films are strongly affected by the thickness of the amorphous In 0.6 Ga 0.4 As buffer layer. The thinner In 0.6 Ga 0.4 As buffer layer is not enough to efficiently release the misfit strain between the In 0.3 Ga 0.7 As epilayer and the GaAs substrate, while the thicker In 0.6 Ga 0.4 As buffer layer is unfavorable to trap the dislocations and prevent them from extending into the In 0.3 Ga 0.7 As epi-films. We have demonstrated that the amorphous In 0.6 Ga 0.4 As buffer layer with a thickness of 2 nm can advantageously prevent threading and misfit dislocations from propagating into the subsequent In 0.3 Ga 0.7 As epilayer and increase the degree of relaxation of the as-grown In 0.3 Ga 0.7 As, ultimately leading to a high-quality In 0.3 Ga 0.7 As film. Our novel buffer layer technology has triggered a simple but effective approach to grow high-crystallinity In 0.3 Ga 0.7 As epitaxial film and is favorable for fabrication of GaAs-based high-efficiency four-junction solar cells.

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Section: Resultsmentioning

confidence: 99%

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Gao

Lei

et al. 2014

CrystEngComm

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Triple-axis X-ray Reciprocal Space Mapping of In(y)Ga(1-y)As Thermophotovoltaic Diodes Grown on (100) InP Substrates

Cited by 1 publication

References 11 publications

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

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Triple-axis X-ray Reciprocal Space Mapping of In(y)Ga(1-y)As Thermophotovoltaic Diodes Grown on (100) InP Substrates

Cited by 1 publication

References 11 publications

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

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Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy