Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Hahn, Hernsoo; Lükens, Gerrit; Ketteniss, N.; Kalisch, H.; Vescan, A.

doi:10.1143/apex.4.114102

Cited by 76 publications

(58 citation statements)

References 13 publications

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“…Indeed, some groups have reported AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) with excellent device performances such as high blocking voltages and low on-state resistances, which are very attractive for high-efficiency power-switching applications [1][2][3][4][5][6][7][8][9][10][11]. In addition, AlGaN/GaN HEMTs have been demonstrated to operate with good switching characteristics and high power conversion efficiencies when used in DC/DC converters and DC/AC inverters [7,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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University. His research interests included surface passivation and device processing technologies for III-V compound semiconductors. Currently, his major activity expanded into characterization and control of surfaces and interfaces of GaN and related materials and their application to GaN-based electron devices. He has authored or co-authored over 160 papers in scientific and technical journals.

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Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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“…The sample was subjected to repeated cycles of van der Pauw and Hall measurements and of an etch in an ICP-RIE tool using the digital etch technique. 7 Band diagrams for the epitaxial layer stack described in Sec. III were obtained by TCAD simulations.…”

Section: Resultsmentioning

confidence: 99%

“…3,4 By using a 2-D electron gas (2DEG) in GaNbased heterojunctions and by benefiting from the high bandgap of GaN and its related alloys, low on-resistance R on and high blocking voltages V bd can be realised at the same time. 5,6 Challenges which have been encountered so far at designing GaN-based devices are the realisation of enhancement mode, 7,8 of high blocking voltages 9 and maintaining a low dynamic on-resistance R on,dyn . 9 Research today is mainly focused on lateral devices, and such devices are also the first on the market.…”

mentioning

confidence: 99%

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

Hahn

Reuters

Geipel

et al. 2015

Journal of Applied Physics

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GaN-based heterostructure FETs (HFETs) featuring a 2-D electron gas (2DEG) can offer very attractive device performance for power-switching applications. This performance can be assessed by evaluation of the dynamic on-resistance Ron,dyn vs. the breakdown voltage Vbd. In literature, it has been shown that with a high Vbd, Ron,dyn is deteriorated. The impairment of Ron,dyn is mainly driven by electron injection into surface, barrier, and buffer traps. Electron injection itself depends on the electric field which typically peaks at the gate edge towards the drain. A concept suitable to circumvent this issue is the charge-balancing concept which employs a 2-D hole gas (2DHG) on top of the 2DEG allowing for the electric field peak to be suppressed. Furthermore, the 2DEG concentration in the active channel cannot decrease by a change of the surface potential. Hence, beside an improvement in breakdown voltage, also an improvement in dynamic behaviour can be expected. Whereas the first aspect has already been demonstrated, the second one has not been under investigation so far. Hence, in this report, the effect of charge-balancing is iscussed and its impact on the dynamic characteristics of HFETs is evaluated. It will be shown that with appropriate device design, the dynamic behaviour of HFETs can be improved by inserting an additional 2DHG

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“…2 With e-mode devices, the application of a gate dielectric is a must considering that devices need to be turned on without excessive gate current. 3 Furthermore, the application of an insulator provides an additional interface, at which the presence of charge influences the electrostatics of the heterostructure. [4][5][6][7] Of particular importance is that deep interface states D it at the oxide/barrier interface do not change their charge state under normal operating conditions of a metal semiconductor heterostructure field effect transistor (MISHFET).…”

mentioning

confidence: 99%

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

Hahn

Pécz

Kovács

et al. 2015

Journal of Applied Physics

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Articles you may be interested inUltraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts J. Appl. Phys. 116, 083108 (2014) In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasmaoxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 Â 10 13 cm -2 allowing to considerably shift the threshold voltage to more positive values. V C 2015 AIP Publishing LLC.

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Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Cited by 76 publications

References 13 publications

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

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