Recent status of the Kiev nuclear probe

Lebed, S.; Tolmachov, M.; Kukharenko, O.; Veselov, O.

doi:10.1016/j.nimb.2009.03.007

Cited by 6 publications

(7 citation statements)

References 8 publications

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“…To calculate the number of fluorine atoms, we also used formula (1). The fluorine peak can be pronouncedly distinguished against the scattering background from silicon.…”

Section: Resultsmentioning

confidence: 99%

“…2, b was measured). The microbeam positioning was executed with the help of a mechanic 3D (in the coordinate space) micromanipulator and an optical 500X microscope [1,2]. The size of a proton beam spot on the specimen surface did not exceed 15 µm, and the current strength was 300 pA. To filter off the intensive low-energy X-rays emitted by the silicon substrate of the specimen, a standard filter -a 40-µm aluminum film -was arranged before the PIXE detector.…”

Section: Resultsmentioning

confidence: 99%

“…Measurements were carried out on an original installation "Scanning nuclear microprobe" based on a modernized single-ended electrostatic ion accelerator KN-3000 of the Van de Graaff type [1,2]. The major electrotechnical parameters of this installation are as follows:…”

Section: Experimental Partmentioning

confidence: 99%

“…The purpose of this research consisted in checking some results obtained at two indicated stages of the Au/Si structure fabrication after certain modifications of the corresponding technology had been introduced. At the same time, the work aimed at testing the functionalities of a high-precision microanalyti- cal unit "Scanning nuclear probe" that had been recently put into operation [1,2]. In our researches, we used analytical methods of nuclear physics, namely, the methods of nuclear microanalysis.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Nuclear Microanalysis Study of Surface Nanolayers in Gold-Silicon Structures

Soroka

Lebed

Tolmachev³

et al. 2013

Ukr. J. Phys.

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The Rutherford backscattering and particle-induced X-ray emission methods are used to study the surface layers in gold-silicon structures, the parameters of which govern the operational characteristics of electron devices constructed on their basis. The measurements are performed on a high-precision micro-analytical unit "Nuclear scanning probe" recently put into operation at the "Spectrum" laboratory. The thicknesses of a gold layer sputtered onto the specimen surface were about 17 and 20 nm for two different specimens. The layer non-uniformity was less than 1.6 nm and did not exceed the experimental error. A substantial amount of the fluorine impurity was revealed under the gold layer in the gold-silicon interface layer. Probably, it may be remnants of fluorine remaining after the etching of the silicon surface in a mixture of acids that included the hydrofluoric one (HF). The amount of fluorine detected in a series of measurements was found to strongly correlate with the current of alpha-particles at the target surface during the spectrum measurement. Since the local heating of the target depends on the current, it is evident that the local diffusion rate of fluorine atoms varied over the target surface. K e y w o r d s: nuclear microanalysis, Rutherford backscattering, particle induced X-ray emission, alpha particles, "Nuclear scanning probe", surface layers, interface layer.

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“…To calculate the number of fluorine atoms, we also used formula (1). The fluorine peak can be pronouncedly distinguished against the scattering background from silicon.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Experimental Partmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nuclear Microanalysis Study of Surface Nanolayers in Gold-Silicon Structures

Soroka

Lebed

Tolmachev³

et al. 2013

Ukr. J. Phys.

View full text Add to dashboard Cite

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“…The diameter of the focused beam was 40 m. The irradiation was carried out at the movement of the sample, and the conductive channel 3 mm long and 0.44 mm wide was created. A detailed description of samples and the irradiation technique using the Kyiv ion microprobe are given in [7,11]. The implantation was carried out at room temperature of the samples holder.…”

Section: Experimental Methodsmentioning

confidence: 99%

Hall Study of Conductive Channels Formed in Germanium by Beams of High-Energy Light Ions

et al. 2021

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The implantation of the high-energy ions of H+ or He+ in germanium leads to the creation of buried conductive channels in its bulk with equal concentrations of acceptor centers. These centers are the structure defects of the crystal lattice which arise in the course of deceleration of high-energy particles. This method of introducing electrically active defects is similar to the doping of semiconductors by acceptor-type impurities. It has been established that the density of defects increases with the implantation dose till ≈5×10^15 cm−2. The further increase of the implantation dose does not affect the level of doping. In the range of applied doses (10^12–6×10^16) cm−2, the Hall mobility of holes in the formed conducting channels is practically independent of the implanted dose and is about (2-3)×10^4 cm2/Vs at 77 K. The doping ofthe germanium by high-energy ions of H+ or He+ to obtain conducting regions with high hole mobility can be used in the microelectronics technology.

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Microwave Absorption in Ge After Bombardment of Helium Ions Beam

Lysochenko,

Kukharenko,

Ilchenko

et al. 2023

Advanced Physics Research

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In this work, the effect of Ge sample bombardment by energy Ei = 1.2 MeV mono‐energetic He+ ions within the fluence range of 1013–1.2 × 1015 cm−2 on the microwave reflection/transmission modification in the frequency range of 26–38 GHz is investigated. It is shown for the first time that such Ge treatment allows achieving a drastic increase in its interaction with microwaves. After the 1 µm thick undersurface area of Ge, accounting for less than 10−3 of its bulk, underwent the fluence of 1.2 × 1015 cm−2, the increase of the microwave absorption coefficient from 0.06 to 0.78 and decrease of the microwave reflection coefficient from 0.7 to 0.18 are observed. This is caused by the occurrence of dangling atomic bonds in nanoscale cavities inside the material. Most probable energy loss mechanisms of microwaves in modified Ge are suggested. Modified semiconductor structures can be used as microwave‐absorbing coverings, devices employing a periodic structure of materials or a gradient of its properties.

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Recent status of the Kiev nuclear probe

Cited by 6 publications

References 8 publications

Nuclear Microanalysis Study of Surface Nanolayers in Gold-Silicon Structures

Nuclear Microanalysis Study of Surface Nanolayers in Gold-Silicon Structures

Hall Study of Conductive Channels Formed in Germanium by Beams of High-Energy Light Ions

Microwave Absorption in Ge After Bombardment of Helium Ions Beam

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