Recent radiation damage and single event effect results for microelectronics

Abstract

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates ( 0

SEE sensitivities of selected advanced flash and first-in-first-out memories

“…For IDT FIFO, the derived value seems to fit well. In general SEE sensitivity of present FIFO test samples is similar to that observed with smaller memory devices several years ago [1,2,3]. For example SEU LET th is at about 3 MeV/(mg/cm 2 ) for Matra 67204EV-50 (4K x 9) FIFO [2].…”

“…Single event effects (SEE) test results of FIFO (mostly 4K x 9 devices), which were reported within the last several years, will be compared with those that we obtained more recently [1,2,3]. The FIFO test devices included in our SEE investigations are shown in Table 1.…”

“…Many of these are capable of operating up to about 160 MHz clock rate. These may be compared to some FIFOs (mostly 4K x 9 devices) which were tested within the last several years [1,2,3]. A FIFO is made up of various sections in the die as shown in Figure 1.…”

SEU-tolerant IQ detection algorithm for LLRF accelerator system

“…The temporary effects (single event effects-SEE) are caused by charged particles energetic enough to ionize the semiconductor by generating excessive electron/hole pairs [12][13][14][15].…”

“…The internal FPGA multipliers (signed 18 × 18 bits) were used in MACs. The samples of the IF signal come from ADC as a 14 bits number coded in signed 2's complement format (with range [−2 13 , 2 13 [). They are sign-bit extended up to 18 bits and connected to one of the inputs of the MAC.…”