Recent Progress on Titanium Sesquioxide: Fabrication, Properties, and Applications

Abstract

Titanium sesquioxide (Ti2O3) is drawing broad attention due to its fascinating physical properties and promising applications in the fields of energy, biomedicine, and electronics, among others. Its richness is due mainly to the strongly correlated 3d1 electrons on the Ti3+ sites. In stark contrast to titanium dioxide (TiO2), Ti2O3 has an ultra‐narrow bandgap (≈0.1 eV) at room temperature, resulting from strong correlation among the 3d1 electrons. Distinct electrical and optical properties are introduced in Ti2O3, accompanied with varied intriguing applications. Remarkable photothermal conversion, infrared photodetection, and electrocatalytic properties have been reported and explored in the past few years. Based on its unique and excellent properties, Ti2O3 has been utilized in seawater desalination, electrocatalytic water splitting, cancer therapy, hydrogen production, mid‐infrared photodetection, nitrogen fixation, Li‐ion batteries, etc. Herein, the fabrication, structural and electronic properties of Ti2O3 are comprehensively introduced, with a focused summary of recent research progress on its applications. Finally, current challenges, opportunities, and future perspectives of Ti2O3 are discussed.

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

“…Its ultranarrow band gap makes it one of the narrowest band gap semiconductors, along with InSb, Ag 2 Se, Ti 2 O 3 , and some of the Hg 1– x Cd x Te compounds (depending on x ). Its potential applications extend from infrared detectors, thermal imaging to photothermal conversion, and thermoelectric devices. ,, The absorption onset at ∼12.9 μm makes it suitable for thermal imaging and photodetection in the 8–12 μm atmospheric window as well as in the 3–5 μm range. Additionally, its ultranarrow band gap will create a type I band alignment with most semiconductors, which can also be utilized in heterojunction applications such as suggested for PbSe .…”

“…The ultranarrow band gap and the high electrical conductivity found in this study make γ-SnSe a potential nontoxic, earth-abundant material for use in a variety of applications. Its ultranarrow band gap makes it one of the narrowest band gap semiconductors, along with InSb, Ag 2 Se, Ti 2 O 3 , and some of the Hg 1– x Cd x Te compounds (depending on x ). Its potential applications extend from infrared detectors, thermal imaging to photothermal conversion, and thermoelectric devices. ,, The absorption onset at ∼12.9 μm makes it suitable for thermal imaging and photodetection in the 8–12 μm atmospheric window as well as in the 3–5 μm range.…”

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

“…High dielectric materials facilitate the realization of low-voltage and high-performance thin-film transistors because of their large area capacitance and sender-type electron traps [ 48 ]. Compared to silicon-based thin-film transistors, titanium oxide has high transparency [ 49 ] in the visible range, high chemical stability [ 50 ], non-toxicity [ 51 ], and earth abundance [ 52 ]. It can be used as an alternative channel material for metal oxide thin-film transistor applications.…”

Shifting the O2 reduction pathway from H2O to H2O2via in situ reconstruction of Ti2O3 nanoparticles

“…It's noteworthy that the anatase phase TiO 2 , with its weaker crystal structure, is thermodynamically favored to form on the surface rather than within the bulk phase. 19,23 Typically, the TiO 2 layer formed by in situ reconstruction on the surface tends to exhibit an abundance of oxygen vacancies and a less well-dened crystal structure, oen unable to achieve complete crystallinity instantaneously. However, for TiO 2 , the stable anatase crystal form is thermodynamically favored, while brookite is less stable, and rutile requires a higher energy barrier for formation.…”