Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Wei, Peng; Wang, Haolin; Lü, Hui; Yin, Lei; Wang, Yue; Grandidier, B.; Yang, Deren; Pi, Xiaodong

doi:10.1002/smll.202100655

Cited by 10 publications

(3 citation statements)

References 132 publications

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“…The need to characterize forces and imaging cellular ultrastructure is only reachable through advanced techniques such as super-resolution fluorescence microscopy coupled to electron microscopes [ 115 ]. STM/STS might evolve in advanced techniques to provide a three-dimensional profile of the surface and local information at the contact point between two different cell regions in a similar fashion to those measurements for semiconductor heterojunctions [ 116 ].…”

Section: Relevance Of Stm Imaging In Biological Applicationsmentioning

confidence: 99%

Scanning Tunneling Microscopy of Biological Structures: An Elusive Goal for Many Years

Rodríguez-Galván

Contreras‐Torres

2022

Nanomaterials

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Scanning tunneling microscopy (STM) is a technique that can be used to directly observe individual biomolecules at near-molecular scale. Within this framework, STM is of crucial significance because of its role in the structural analysis, the understanding the imaging formation, and the development of relative techniques. Four decades after its invention, it is pertinent to ask how much of the early dream has come true. In this study, we aim to overview different analyses for DNA, lipids, proteins, and carbohydrates. The relevance of STM imaging is exhibited as an opportunity to assist measurements and biomolecular identification in nanobiotechnology, nanomedicine, biosensing, and other cutting-edge applications. We believe STM research is still an entire science research ecosystem for joining several areas of expertise towards a goal settlement that has been elusive for many years.

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Section: Relevance Of Stm Imaging In Biological Applicationsmentioning

confidence: 99%

Scanning Tunneling Microscopy of Biological Structures: An Elusive Goal for Many Years

Rodríguez-Galván

Contreras‐Torres

2022

Nanomaterials

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“…In this connection, we focus especially on the influence of local variations, that is, the specific topography and the different electronic properties of the two substrate regions, G free /S and G bond /S. The results are gained with well-established STM and STS methods revealing electronic properties at well-defined positions on the 2D material surface. ,− These insights are additionally supported by scanning electron microscopy (SEM), Raman spectroscopy, and atomic force microscopy (AFM).…”

Section: Introductionmentioning

confidence: 99%

The MoS₂-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS₂ Band Structure

et al. 2023

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Van der Waals MoS2/graphene heterostructures are promising candidates for advanced electronics and optoelectronics beyond graphene. Herein, scanning probe methods and Raman spectroscopy were applied for analysis of the electronic and structural properties of monolayer (ML) and bilayer 2H-MoS2 deposited on single-layer graphene (SLG)-coated sapphire (S) substrates by means of an industrially scalable metal organic chemical vapor deposition process. The SLG/S substrate shows two regions with distinctly different morphology and varied interfacial coupling between SLG and S. ML MoS2 nanosheets grown on the almost free-standing graphene show no detectable interface coupling to the substrate, and a value of 2.23 eV for the MoS2 quasiparticle bandgap is determined. However, if the graphene is involved in hydrogen bonds to the hydroxylated sapphire surface, an increased MoS2/graphene interlayer coupling results, marked by a shift of the conduction band edge toward Fermi energy and a reduction of the ML MoS2 quasiparticle bandgap to 1.98 eV. The surface topography reveals a buckle structure of ML MoS2 in conformity with SLG that is used to determine the dependence of the ML MoS2 bandgap on the interfacial spacing of this heterostructure. In addition, an in-gap acceptor state about 0.9 eV above the valence band minimum of MoS2 has been observed on locally elevated positions on both SLG/S regions, which is attributed to local bending strain in the grown MoS2 nanosheets. These fundamental insights reveal the impact of the underlying substrate on the topography and the band alignment of the ML MoS2/SLG heterostructure and provide the possibility for engineering the quasiparticle bandgap of ML MoS2/SLG grown on controlled substrates that may impact the performance of electronic and optoelectronic devices therewith.

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“…In this article, the change in charge accumulation layer in the presence of UV is attempted to quantify with scanning tunnelling microscopy (STM). Extensive studies are being reported based on STM to estimate the defect states [5] and band alignment, interface states in heterostructures [6], and the doping concentration [7]. In the memory fields (ReRAM) [8,9].…”

Section: Introductionmentioning

confidence: 99%

Reverse Sensing Kinetics investigation with STM of Deep-UV triggered TiO₂/WO₃ NCs for Isoprene detection

Akshaya

Basu

2023

J. Phys.: Conf. Ser.

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Traditional diagnostic technologies in the health sector are either bulky or expensive and invasive; hence, the breath analyzer era emerged, wherein it can be a single sensor for a single illness diagnosis or a multi-sensor array to diagnose a single disease with numerous biomarkers. Isoprene, commonly known as a biomarker for various diseases, mainly for oxidative stress/cholesterol abnormalities, is targeted in this study. A drop-casted layer of microwave-treated Titanium dioxide/Tungsten oxide (TiO 2/WO 3) nanocomposites (NCs) optically activated in the deep UV (λ-300nm) range is employed for the detection of Isoprene. An optimised moderately doped TiO 2/WO 3 NCs calibrated under 20 to 80 ppb of isoprene is considered from our previous work and thoroughly investigated for its sensing pattern discrepancy under optical activation. Our study aims to comprehend the reverse sensing pattern observed during optical activation of the sensing layer utilizing a precision scanning tunnelling microscope (STM) integrated with a deep-UV LED of λ-300nm. STM experiments confirm that the observed reverse sensing pattern, which contradicts the normal mode, is driven by an excess photogenerated surface n-type carrier concentration of 8.785 × 1015 cm −3.

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Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Cited by 10 publications

References 132 publications

Scanning Tunneling Microscopy of Biological Structures: An Elusive Goal for Many Years

Scanning Tunneling Microscopy of Biological Structures: An Elusive Goal for Many Years

The MoS₂-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS₂ Band Structure

Reverse Sensing Kinetics investigation with STM of Deep-UV triggered TiO₂/WO₃ NCs for Isoprene detection

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Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Cited by 10 publications

References 132 publications

Scanning Tunneling Microscopy of Biological Structures: An Elusive Goal for Many Years

Scanning Tunneling Microscopy of Biological Structures: An Elusive Goal for Many Years

The MoS2-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS2 Band Structure

Reverse Sensing Kinetics investigation with STM of Deep-UV triggered TiO2/WO3 NCs for Isoprene detection

Contact Info

Product

Resources

About

The MoS₂-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS₂ Band Structure

Reverse Sensing Kinetics investigation with STM of Deep-UV triggered TiO₂/WO₃ NCs for Isoprene detection