Recent progress of large size and low dislocation bulk GaN growth

Mikawa, Yutaka; Ishinabe, Takayuki; Kagamitani, Yuji; Mochizuki, Tae; Ikeda, Hirofumi; Iso, Kenji; Takahashi, Tatsuya; Kubota, Keiichi; Enatsu, Yuuki; Tsukada, Yusuke; Izumisawa, Satoru

doi:10.1117/12.2540737

Cited by 20 publications

(23 citation statements)

References 15 publications

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“…In the case of GaN, the (0001) surface (c-plane) is mainly considered. Today, the lowest value of TDD, of the order of 10 4 cm −2 , is reported for Am-GaN [21][22][23]. This value is two orders of magnitude lower than TDD in commercially available HVPE-GaN wafers.…”

Section: Requirements For Gan Substratesmentioning

confidence: 92%

“…To this day, the formation of side facets has not been defeated and they are still created during HVPE-GaN growth in the [0001] direction. In spite of this, MCC has already demonstrated 4mm-thick HVPE-GaN-on-Am-GaN [22] and IHPP PAS showed 3-mm-thick HVPE-GaN-on-Am-GaN (see Figure 9b) [55]. It was observed that during the homoepitaxial crystallization of HVPE-GaN in the [0001] direction the non-polar and semi-polar growth of "wings" (laterally-grown material) leads to the formation of large stress close to the edges of the growing crystal.…”

Section: Hvpe-gan On Native Ammonothermal Gan Seedsmentioning

confidence: 99%

Section: Hvpe-gan On Native Ammonothermal Gan Seedsmentioning

confidence: 99%

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GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

et al. 2020

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Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.

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Section: Requirements For Gan Substratesmentioning

confidence: 92%

Section: Hvpe-gan On Native Ammonothermal Gan Seedsmentioning

confidence: 99%

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GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

et al. 2020

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“…The experimental geometry of ammonothermal setups for bulk growth of GaN is generally some variation of the setup depicted in Figure 3a, which is based on several articles from the literature [4,20,44,45] and the experience of the authors. The internal configuration shown in the figure is valid for the case of retrograde solubility of GaN.…”

Section: Simulation Domain and Geometrymentioning

confidence: 99%

“…Due to its scalability, the ammonothermal method is still believed to have the potential to become a strong competitor for halide vapor phase epitaxy (HVPE), which is the most common method for bulk GaN growth at present [13]. Recent progress in ammonothermal GaN growth includes a demonstration of scalability to pilot production for simultaneous growth of likely about 100 boules in one reactor [6], a masking technique for circumventing issues related to growth on different facets [18], growth of nearly bowfree crystals (radius of curvature: 1460 m) at pressures as low as 100 to 120 MPa [19], and growth of nearly 4-inch size crystals while keeping off-angle distributions as small as ±0.006 • along both a-axis and m-axis [20]. Besides its use for the growth of bulk GaN, the ammonothermal technique is increasingly being utilized for exploratory syntheses of various binary, ternary, and multinary nitride and oxynitride materials [21][22][23], including nitride semiconductors composed of earth-abundant elements [24].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

et al. 2021

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Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important semiconductor material. This review presents an overview of the literature on simulations targeting ammonothermal growth of GaN. Approaches for validation are also reviewed, and an overview of available methods and data is given. Fluid flow is likely in the transitional range between laminar and turbulent; however, the time-averaged flow patterns likely tend to be stable. Thermal boundary conditions both in experimental and numerical research deserve more detailed evaluation, especially when designing numerical or physical models of the ammonothermal growth system. A key source of uncertainty for calculations is fluid properties under the specific conditions. This originates from their importance not only in numerical simulations but also in designing similar physical model systems and in guiding the selection of the flow model. Due to the various sources of uncertainty, a closer integration of numerical modeling, physical modeling, and the use of measurements under ammonothermal process conditions appear to be necessary for developing numerical models of defined accuracy.

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Research Progress in Liquid Phase Growth of GaN Crystals

Sun,

Liu,

Wang

et al. 2024

Chemistry A European J

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As a wide band gap semiconductor, gallium nitride (GaN) has excellent structural stability and mechanical properties, giving it unique advantages in applications such as high frequency, high power, and high temperature. As a result, it has broad application prospects in optoelectronics and microelectronics. However, the lack of high‐quality, large‐size GaN crystal substrates severely limit the improvement of electronic device performance. To solve this problem, liquid phase growth of GaN has attracted much attention because it can produce higher quality GaN crystals compared to traditional vapor phase growth methods. This review introduces two main methods of liquid phase growth of GaN: the flux method and ammonothermal method, as well as their advantages and challenges. It reviews the research history and recent advances of these two methods, including the effects of different solvents and mineralizers on the growth quality and performance of GaN crystals, as well as various technical improvements. This review aims to outline the principles, characteristics, and development trends of liquid phase growth of GaN, to provide more inspiration for future research on liquid phase growth, and to achieve further breakthroughs in its development and commercial application.

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Recent progress of large size and low dislocation bulk GaN growth

Cited by 20 publications

References 15 publications

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Research Progress in Liquid Phase Growth of GaN Crystals

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