Recent Progress in Two‐Dimensional Ferroelectric Materials

Abstract

She is currently working on domain dynamics, 2D ferroelectrics, and nonvolatile memories based on piezoresponse force microscopy. Ni Zhong received her B.S. degree from Shanghai Institute of Ceramics, Chinese Academy of Sciences, and her Ph.D. from NARA Institute of Science and Technology (NAIST), Japan. In 2012, she joined the Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University as an associate professor. She is currently focusing on ferroelectric thin films/2D ferroelectrics/strongly correlated material and novel devices for next-generation computing systems.

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

“…Although the ferroelectric polarization in 2D materials cannot be measured or detected accurately owing to the weak response and reduced dimension, few studies have precisely measured and detected the ferroelectric polarization depending on both direct and indirect measurements. [ 29a ]…”

“…Moreover, several reviews focusing on the research progress of 2D ferroelectrics have been published. [ 29 ] Herein, we present a review that focuses on the intrinsic and extrinsic origins of 2D ferroelectrics. Furthermore, we discuss the progress achieved in both developed and laboratory‐validated applications of the 2D ferroelectrics.…”

Intrinsic polarization coupling in 2D α‐In2Se3toward artificial synapse with multimode operations

“…Besides, growing high‐quality ferroelectric thin films usually need careful selection of growth substrates as well as complex fabrication processes 21–23 . Against this backdrop, two‐dimensional (2D) ferroelectric materials have emerged as attractive candidates for memristor devices 24–27 due to the stability of their ferroelectricity when devices are scaled down and the fact that they can be used directly as a semiconductor channel without the need for integrating ferroelectric dielectric with other semiconductors 28 24,29,30 .…”

“…[21][22][23] Against this backdrop, twodimensional (2D) ferroelectric materials have emerged as attractive candidates for memristor devices [24][25][26][27] due to the stability of their ferroelectricity when devices are scaled down and the fact that they can be used directly as a semiconductor channel without the need for integrating ferroelectric dielectric with other semiconductors. 28 Also, 2D indium selenide (α-In 2 Se 3 ) has been demonstrated recently to possess coupled in-plane (IP) and out-of-plane (OOP) ferroelectric polarizations simultaneously. 24,29,30 Through manipulating the ferroelectric polarization directly in the semiconducting channel, 2D α-In 2 Se 3 -based electronic devices hold potential for artificial synapses with simple structure but rich functions.…”

Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric

“…Recently CuInP 2 S 6 (CIPS), a typical room-temperature van der Waals (vdW) layered ferroelectric crystal 19,20,21 , has attracted intensive attention due to its unexpected features including giant negative piezoelectricity 22 , tunable quadruple-well ferroelectric nature 23 , negative capacitance characteristic 24 and the interplay between ferroelectricity and ionic conductivity 25,26,27 . These unique characteristics not only bring new insights into the fundamental research 28,29 , but also provide new opportunities for diverse applications of layered ferroelectrics 30,31 .…”