2010
DOI: 10.1080/09500340.2010.486485
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Recent progress in third generation infrared detectors

Abstract: In this paper, issues associated with the recent development third generation detectors are discussed. In this class of detectors HgCdTe photodiodes, type II superlattice photodiodes, quantum-well infrared photoconductors (QWIPs), and quantum dot IR photodetectors (QDIPs) are considered. The main challenges facing multicolor devices concern complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets… Show more

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Cited by 19 publications
(8 citation statements)
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“…With the rapid development of infrared detecting technology, higher criteria have been suggested for new generation of high-performance infrared imaging systems with large-scale,little pixel pitch, high-resolution, and low power consumption. [2][3][4][5]. To enhance spatial resolution, the pixel area should be decreased and the detector array size should be raised.…”
Section: Introductionmentioning
confidence: 99%
“…With the rapid development of infrared detecting technology, higher criteria have been suggested for new generation of high-performance infrared imaging systems with large-scale,little pixel pitch, high-resolution, and low power consumption. [2][3][4][5]. To enhance spatial resolution, the pixel area should be decreased and the detector array size should be raised.…”
Section: Introductionmentioning
confidence: 99%
“…The main obstacle to achieve NIR‐II biomedical fluorescence imaging is a lack of low‐cost, high‐quality cameras. InGaAs cameras used for biomedical fluorescence imaging are available due to the development of military imaging; this includes laser beam profile alignment and inspection of λ =1310 and 1550 nm telecommunication lasers, visualizing military targeting lasers, and covert surveillance and night vision . Electrons are promoted to the conduction band (CB), as ambient thermal energy, because of the small direct band gap of InGaAs.…”
Section: Introductionmentioning
confidence: 99%
“…It has been developed from bulk material to the quantum well structure [1,2]. The 3 ~ 5 μm middle-wavelength-infrared (MWIR) region is of particular interest in the fields of scientific research, aerial reconnaissance, and missile tracking.…”
Section: Introductionmentioning
confidence: 99%