2022
DOI: 10.1016/j.ceramint.2022.10.102
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Recent progress in synthesis, growth mechanisms, and electromagnetic wave absorption properties of silicon carbide nanowires

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Cited by 19 publications
(11 citation statements)
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“…In addition, SiC@SiO 2 NWs can be prepared using SiC as a substrate . For example, Qu et al prepared SiC@SiO 2 NWs by oxidizing SiC NWs in air at high temperatures (900–1200 °C) and found that SiC@SiO 2 NWs showed better thermal insulation properties than SiC NWs .…”
Section: Introductionmentioning
confidence: 99%
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“…In addition, SiC@SiO 2 NWs can be prepared using SiC as a substrate . For example, Qu et al prepared SiC@SiO 2 NWs by oxidizing SiC NWs in air at high temperatures (900–1200 °C) and found that SiC@SiO 2 NWs showed better thermal insulation properties than SiC NWs .…”
Section: Introductionmentioning
confidence: 99%
“…20,21 In addition, SiC@SiO 2 NWs can be prepared using SiC as a substrate. 18 For example, Qu et al prepared SiC@SiO 2 NWs by oxidizing SiC NWs in air at high temperatures (900−1200 °C) and found that SiC@SiO 2 NWs showed better thermal insulation properties than SiC NWs. 22 Lu et al prepared SiC@ SiO 2 NWs networks by CVD and subsequent heat treatment at 1200 °C, which have potential for engineering applications in harsh environments owing to their lightweight (360 ± 10 mg cm −3 ), high mechanical strength (compressive strength of 16 MPa), and damage resistance.…”
Section: ■ Introductionmentioning
confidence: 99%
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