Recent Progress in Near‐Field Tip Enhancement: Principles and Applications

Yin, Hang; Zhang, Jianwei; Wang, Xuewen; Cui, Jianlei; Wang, Wenjun; Mei, Xuesong

doi:10.1002/pssr.202100456

Cited by 6 publications

(4 citation statements)

References 188 publications

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“…Then, the maximum pattern depth ( z max ) can be redefined as where I 0 is the magnitude of the incident electric-field intensity. In this study, a field enhancement factor ( F ) is specified to accurately predict the strength of the near-field enhancement accurately at the extremity of a plasmonic BNA 44 , 45 , where E i (g) and E 0 are the magnitudes of the enhanced electric-field in the PR layer and incident electric field, respectively. In previous work, a theoretical model with considering the finite-size effects was proposed to calculate the plasmonic near-field excited by a metal nanoparticle or a nanoridge aperture, and the field intensity enhancement can be calculated as a function of size g , I i (g) = I 0 |1+ξ’| 2 , 46 .…”

Section: Modelingmentioning

confidence: 99%

Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Han

Deng

et al. 2023

Microsyst Nanoeng

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Plasmonic lithography, which uses the evanescent electromagnetic (EM) fields to generate image beyond the diffraction limit, has been successfully demonstrated as an alternative lithographic technology for creating sub-10 nm patterns. However, the obtained photoresist pattern contour in general exhibits a very poor fidelity due to the near-field optical proximity effect (OPE), which is far below the minimum requirement for nanofabrication. Understanding the near-field OPE formation mechanism is important to minimize its impact on nanodevice fabrication and improve its lithographic performance. In this work, a point-spread function (PSF) generated by a plasmonic bowtie-shaped nanoaperture (BNA) is employed to quantify the photon-beam deposited energy in the near-field patterning process. The achievable resolution of plasmonic lithography has successfully been enhanced to approximately 4 nm with numerical simulations. A field enhancement factor (F) as a function of gap size is defined to quantitatively evaluate the strong near-field enhancement effect excited by a plasmonic BNA, which also reveals that the high enhancement of the evanescent field is due to the strong resonant coupling between the plasmonic waveguide and the surface plasmon waves (SPWs). However, based on an investigation of the physical origin of the near-field OPE, and the theoretical calculations and simulation results indicate that the evanescent-field-induced rapid loss of high-k information is one of the main optical contributors to the near-field OPE. Furthermore, an analytic formula is introduced to quantitatively analyze the effect of the rapidly decaying feature of the evanescent field on the final exposure pattern profile. Notably, a fast and effective optimization method based on the compensation principle of the exposure dose is proposed to reduce the pattern distortion by modulating the exposure map with dose leveling. The proposed pattern quality enhancement method can open new possibilities in the manufacture of nanostructures with ultrahigh pattern quality via plasmonic lithography, which would find potentially promising applications in high density optical storage, biosensors, and plasmonic nanofocusing.

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Section: Modelingmentioning

confidence: 99%

Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Han

Deng

et al. 2023

Microsyst Nanoeng

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“… where I0 is the magnitude of the incident electric-field intensity. In this study, a field enhancement factor (F) is specified to predict the strength of the near-field enhancement accurately at the extremity of a plasmonic BNA 43,44 , ( ) ( )…”

Section: Size Dependence Of Near-field Enhancement With a Plasmonic Bnamentioning

confidence: 99%

Enhancement of pattern quality with loss modulation: Applying plasmonic lithography in sub-20 nm technology node and beyond

Wei

Han

et al. 2022

Preprint

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Plasmonic lithography, which uses the evanescent electromagnetic (EM) fields to image beyond the diffraction limit, has been successfully demonstrated as a main candidate for recording integrated circuits (IC) with sub-10 nm resolution. However, as the feature size continuously down-scaling, the corresponding photoresist profile in general exhibits a very poor pattern fidelity due to the near-field optical proximity effect (OPE), far below the minimum requirement for nanofabrication. The importance of the near-field OPE formation and its minimization for nanodevice fabrication with high dense feature and fidelity necessitates a systematic study of the phenomenon and its origins. In this work, a point-spread function (PSF) generated by a plasmonic bowtie nanoridge aperture (BNA) is employed to account for all physical and chemical phenomena involved in the near-field patterning process. The achievable resolution of plasmonic lithography has successfully been enhanced to approximately 4 nm with numerical simulations. A field enhancement factor (F) as a function of gap size is defined to quantitatively evaluate the strong near-field enhancement effect excited by a plasmonic BNA, which also revels that the high enhancement of evanescent field is due to the strong resonant coupling between the plasmonic waveguide and the surface plasmon waves (SPWs). However, based on the investigation of the physical origin of the near-field OPE, and the theoretical calculations indicate that the evanescent-field-induced high-k information loss is the main optical contributor for the near-field OPE. Furthermore, an analytic formula is introduced to quantitatively analyze the effect of the rapidly decaying feature of the evanescent field on the final exposure pattern profile. Notably, a fast and effective optimization method based on the compensation principle of exposure dose is proposed to relax the pattern distortion by modulating the exposure map with dose leveling. The proposed pattern quality enhancement method can open new possibilities in the manufacture of nanostructures with ultrahigh pattern quality via plasmonic lithography, which would find potentially promising applications in high density optical storage, biosensors, plasmonic nanofocusing, and so forth.

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“…Owing to the near-field effect, the photon tunneling probability between the emitter and thermophotovoltaic (TPV) cells could be significantly enhanced, thereby aiding in the improvement of thermoelectric conversion power. In addition, NFRHT can also find application in enhanced near-field optical microscopy [20,21] . The physical mechanism of radiative heat transfer at the nanoscale differs significantly from that at the macroscopic scale.…”

Section: Introductionmentioning

confidence: 99%

Experiments on near-field radiative heat transfer: A review

Zhang,

Shi,

et al. 2023

CEST

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Near-field radiative heat transfer (NFRHT) has been demonstrated to exceed the blackbody limit due to the coupling effect of evanescent waves in the near-field regime, opening the door to application in active thermal control, thermophotovoltaics, and nanoscale imaging. Although the theoretical studies on NFRHT have been investigated exhaustively, the experimental measurement of NFRHT has been stagnant due to the challenges in controlling gap distance at the nanoscale. Remarkable progress has been greatly boosted until the 21st century to overcome the nanoscale controlling and measurement of NFRHT, benefiting from the advances of micro-nanofabrication techniques and materials science. This review examines an in-depth discussion of the experimental development of NFRHT. According to the structure of the emitter and receiver, the experimental devices are divided into three different categories: plate-to-plate structure, tip-to-plate structure, and sphere-to-plate structure. Existing experimental setups and methodology of NFRHT between metals, semiconductors, two-dimensional materials, and hyperbolic metamaterials are thoroughly explored and analyzed in detail. Finally, the remarks on outstanding challenges at the nanoscale and promising advances in applications are briefly concluded in the measurements of NFRHT.

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Recent Progress in Near‐Field Tip Enhancement: Principles and Applications

Cited by 6 publications

References 188 publications

Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation

Enhancement of pattern quality with loss modulation: Applying plasmonic lithography in sub-20 nm technology node and beyond

Experiments on near-field radiative heat transfer: A review

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