Recent Progress in n‐Channel Organic Thin‐Film Transistors

Wen, Yugeng; Liu, Yunqi

doi:10.1002/adma.200901454

Cited by 291 publications

(187 citation statements)

References 130 publications

(165 reference statements)

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“…[ 88 ] Recently, there have been improvements in both the stability and performance of new n-type organic semiconductors. [ 89 ] The use of both p-and n-channel OFETs with similar mobilities has enabled the fabrication of complementary logic circuits with several advantages including low power consumption and robustness against variation in the transistor parameters. [ 90 ] Both these properties are crucial for low-cost printed and portable applications, and promising results were recently shown with printed complementary inverters on plastics.…”

Section: Organic Semiconductorsmentioning

confidence: 99%

Paper Electronics

Tobjörk¹,

Österbacka²

2011

Advanced Materials

1,187

1,040

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Paper is ubiquitous in everyday life and a truly low-cost substrate. The use of paper substrates could be extended even further, if electronic applications would be applied next to or below the printed graphics. However, applying electronics on paper is challenging. The paper surface is not only very rough compared to plastics, but is also porous. While this is detrimental for most electronic devices manufactured directly onto paper substrates, there are also approaches that are compatible with the rough and absorptive paper surface. In this review, recent advances and possibilities of these approaches are evaluated and the limitations of paper electronics are discussed.

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Section: Organic Semiconductorsmentioning

confidence: 99%

Paper Electronics

Tobjörk¹,

Österbacka²

2011

Advanced Materials

1,187

1,040

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“…85 Thus, one can obtain qualitative information about charge injection efficiency through the Φ m -|E HOMO/LUMO | difference. 85,[89][90][91] Calculated E LUMO , EA and λ i (inner reorganization energy) values for the series of tetrazine derivatives are shown in Figure 5 and Table 5. As stated before, the low LUMO energy facilitates a more efficient charge injection 19,20,26,31 and could also help the environmental stability of the material, although there is still no general guideline for predicting the air-stability of n-type organic semiconductors.…”

Section: Uv-vis Absorption Spectroscopy Uv-vis Spectra For Ph 2 Tz Amentioning

confidence: 99%

Electronic Structure and Charge Transport Properties of a Series of 3,6-(Diphenyl)-s-tetrazine Derivatives: Are They Suitable Candidates for Molecular Electronics?

et al. 2014

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Citation for published item:worlD wF nd qr¡ %D qF nd qrz¡ onD eF nd qrndinoEold¡ nD tFwF nd poxD wFeF nd u(tD hFF nd e£ nsD eF nd welguizoD wF nd pern¡ ndezEq¡ omezD wF @PHIRA 9iletroni struture nd hrge trnsport properties of series of QDTE@diphenylAEsEtetrzine derivtives X re they suitle ndidtes for moleulr eletronisc9D tournl of physil hemistry gFD IIV @RTAF ppF PTRPUEPTRQWF Further information on publisher's website: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details.

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“…38,[77][78][79] For this reason, the sole analysis of Φ and E LUMO values cannot provide a quantitative evaluation of the injection barrier but it nevertheless serves as a guide to predict the alignment of levels at the interface and the electron injection barrier, as well as to interpret trends within a set of related compounds. 48,[79][80][81] Figure 6 shows the calculated E LUMO for the set of (ArCC) 2 Tz and their corresponding parent compounds, Ar 2 Tz. This figure also collects reduction potentials recently reported for some aryl-s-tetrazine derivatives (shown in Figure 7) and their E LUMO estimated by using of an empirical equation proposed by De Leeuw et al 82 The introduction of ethynylene bridges produces an increase within 0.3 -0.6 eV in E LUMO with respect to the corresponding parent compounds.…”

Section: Acs Paragon Plus Environmentmentioning

confidence: 99%

Bis(arylene-ethynylene)-s-tetrazines: A Promising Family of n-Type Organic Semiconductors?

et al. 2015

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We theoretically describe in this work the n-type semiconducting behavior of a set of bis(arylene-ethynylene)-s-tetrazines ((ArCC) 2 Tz), by comparing their electronic properties with those of their parent diaryl-s-tetrazines (Ar 2 Tz) after the introduction of ethynylene bridges. The significantly reduced internal reorganization energy for electron transfer is ascribed to an extended delocalization of the LUMO for (ArCC) 2 Tz as opposite to that for Ar 2 Tz, which was described mostly localized on the s-tetrazine ring. The largest electronic coupling and the corresponding electron transfer rates found 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 for bis(phenyl-ethynylene)-s-tetrazine, as well as for some halogenated derivatives, are comparable to those reported for the best performing n-type organic semiconductors materials such as diimides and perylenes. The theoretical mobilities for the studied compounds turn out to be in the range 0.3 -1.3 cm 2 V −1 s −1 , close to values experimentally determined for common n-type organic semiconductors used in real devices. In addition, ohmic contacts can be expected when these compounds are coupled to metallic cathodes such as Na, Ca and Sm. For these reasons, the future application of semiconducting bis(phenyl-ethynylene)-s-tetrazine and its fluorinated and brominated derivatives in optoelectronic devices is envisioned.

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Recent Progress in n‐Channel Organic Thin‐Film Transistors

Cited by 291 publications

References 130 publications

Paper Electronics

Paper Electronics

Electronic Structure and Charge Transport Properties of a Series of 3,6-(Diphenyl)-s-tetrazine Derivatives: Are They Suitable Candidates for Molecular Electronics?

Bis(arylene-ethynylene)-s-tetrazines: A Promising Family of n-Type Organic Semiconductors?

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