We demonstrate the construction of violet blue multi‐quantum‐well (MQW) InGaN/GaN laser mini‐bars, a novel system in nitride‐based devices. It consists of three laser stripes, closely spaced with 40 μm pitch. The width of the stripe was 3 microns. Structures were fabricated on high pressure grown, low dislocation density substrates. Under cw operation the measured spectra demonstrate sharp, almost single line emission (FWHM ∼ 1.43 Å). Measurements of the optical far field pattern revealed that when operated under threshold the device was emitting light from all three stripes, whereas during lasing we observed the optical mode only in the area of the middle laser stripe. The behaviour of optical mode suggests the formation of the supermode (coherent emission from all three devices). The maximum optical output power was 270 mW at 402 nm and the slope efficiency was 0.7 W/A. This device offers the possibility to overcome the optical output power limit, characteristic for narrow stripe devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)