Recent progress in high-power blue-violet lasers

Uchida, Shiro; Takeya, M.; Ikeda, S.; Mizuno, Takashi; Fujimoto, Takahiro; Matsumoto, Osamu; Goto, Shu; Tojyo, T.; Ikeda, Masao

doi:10.1109/jstqe.2003.820910

Cited by 81 publications

(48 citation statements)

References 13 publications

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“…The spectra of the emitted light were analyzed by Acton Spectrometer 500 mm, equipped with a CCD camera. Most of the experiments show that in order to suppress the lateral modes (in case of the single stripe devices) we need to use very narrow stripe width -below 2 µm [5]. The longitudinal modes were not visible in our measurements because of the insufficient spectrometer resolution (to reveal the longitudinal mode structure a Fabry-Perot interferometer is required).…”

Section: Performance and Characterizationmentioning

confidence: 92%

Violet blue laser mini‐bars

Holc¹,

Wiśniewski²,

Leszczyński³

et al. 2009

Phys. Status Solidi (c)

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We demonstrate the construction of violet blue multi‐quantum‐well (MQW) InGaN/GaN laser mini‐bars, a novel system in nitride‐based devices. It consists of three laser stripes, closely spaced with 40 μm pitch. The width of the stripe was 3 microns. Structures were fabricated on high pressure grown, low dislocation density substrates. Under cw operation the measured spectra demonstrate sharp, almost single line emission (FWHM ∼ 1.43 Å). Measurements of the optical far field pattern revealed that when operated under threshold the device was emitting light from all three stripes, whereas during lasing we observed the optical mode only in the area of the middle laser stripe. The behaviour of optical mode suggests the formation of the supermode (coherent emission from all three devices). The maximum optical output power was 270 mW at 402 nm and the slope efficiency was 0.7 W/A. This device offers the possibility to overcome the optical output power limit, characteristic for narrow stripe devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Performance and Characterizationmentioning

confidence: 92%

Violet blue laser mini‐bars

Holc¹,

Wiśniewski²,

Leszczyński³

et al. 2009

Phys. Status Solidi (c)

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“…It has been known that forward operation voltage of GaN LDs decreases as temperature increases [7,8]. Therefore, due to both decreases in the operation current and the voltage with temperature, input electrical power decreases significantly as temperature increases at constant output power.…”

Section: Measurement Of Ld Characteristicsmentioning

confidence: 99%

Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes

Ryu

Lee

et al. 2007

Phys. Status Solidi (c)

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PACS 42.55. Px, 42.60.Lh We report anomalous temperature characteristics of InGaN laser diodes (LDs) emitting around 450 nm. Our blue LD shows negative characteristic temperature in the usual operation temperature range from 20 °C to 80 °C. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, as deduced from the simulation of carrier density and optical gain. In addition, it is found that wall plug efficiency of the blue LD is even improved as temperature increases.

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“…[1][2][3][4] For high-power InGaN LDs which is required in the above-mentioned applications, the reduction of internal optical loss is very important for the increase of output light power and improvement of device performance. In InGaN LD structures, the optical absorption coefficients of Mg-doped GaN, Si-doped GaN and unintentionally doped GaN (u-GaN) are 100 cm −1 , 30 cm −1 , and 10 cm −1 , respectively.…”

Section: Introductionmentioning

confidence: 99%

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

et al. 2016

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In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

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Recent progress in high-power blue-violet lasers

Cited by 81 publications

References 13 publications

Violet blue laser mini‐bars

Violet blue laser mini‐bars

Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes

The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

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