The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Chen, P.; Zhao, Degang; Jiang, Desheng; Zhu, Jianjun; Liu, Z. S.; Yang, Jie; Li, X.; Le, L. C.; He, Xiaoliang; Liu, W.; Li, X. J.; Liang, Feng; Zhang, B. S.; Yang, Hui; Zhang, Y. T.; Du, Guotong

doi:10.1063/1.4945015

Cited by 6 publications

(3 citation statements)

References 22 publications

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“…The refractive indexes of In x Ga 1−x N and Al x Ga 1−x N are set by linear interpolation. In this work, and the refractive indexes of GaN, AlN, and InN were 2.5067, 2.0767, and 3.4167, respectively [34]. The values of other material parameters are given in [35].…”

Section: Device Structures and Parametersmentioning

confidence: 77%

Composition-graded quantum barriers improve performance in InGaN-based laser diodes

Jiang¹,

Cheng²,

Lin³

et al. 2021

Semicond. Sci. Technol.

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InGaN laser diodes (LDs) with composition-graded (CG) quantum barriers (QBs) are proposed and our study of them described. In the CG QB LDs, the indium content x in the In x Ga 1-x N QB was increased gradually along the growth direction. Their laser power-current-voltage performance curves, carrier concentrations, energy band diagrams, current distributions, electrostatic fields, and stimulated recombination rate in the active region were studied. It is shown that the laser power increases from 59.8 mW to 106.9 mW at 120 mA and the slope efficiency increases from 0.76 W A −1 to 1.27 W A −1 , when the conventional GaN QBs are replaced by the proposed CG QBs. The simulation results indicate that LDs with CG QBs performed better than LDs with conventional GaN QBs and InGaN QBs because the suppression of electron leakage is more efficient, as is hole injection and carrier-stimulated recombination in multiple quantum wells through the appropriate formation of polarization energy band structures.

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Section: Device Structures and Parametersmentioning

confidence: 77%

Composition-graded quantum barriers improve performance in InGaN-based laser diodes

Jiang¹,

Cheng²,

Lin³

et al. 2021

Semicond. Sci. Technol.

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“…The refractive indices of AlGaN and InGaN were estimated according to Chen et al [ 21 ]. Other material parameters used in the simulations were based on those reported in Ref [ 22 ].…”

Section: Structures and Parametersmentioning

confidence: 99%

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Cheng

Zhang

et al. 2021

Nanomaterials

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An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

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“…[1][2][3][4][5][6][7] Compared with the traditional LD structure proposed by Nakamura, [7,8] the optical characteristics, especially the optical field distribution, could be improved by using a complex upper waveguide (UWG) with an unintentionally-doped InGaN (u-InGaN) interlayer. [9][10][11] To meet the demands of practical application, both optical and electrical characteristics should be studied carefully. In particular, the slope efficiency (SE) of GaN-based LD is necessary to be further investigated, which determines the electro-optic conversion efficiency and the possibility of its commercialization, although there is some research on the different influences of u-InGaN UWG on the slope efficiencies (SEs) for the blue and green LDs, including theoretical analyses and experimental research of the slope efficiency of GaN-based LDs.…”

Section: Introductionmentioning

confidence: 99%

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Liang¹,

Zhao²,

Jiang³

et al. 2017

Chinese Phys. B

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Performances of blue and green laser diodes (LDs) with different u-InGaN upper waveguides (UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency (SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In 0.05 Ga 0.95 N lower waveguide (LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.

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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Cited by 6 publications

References 22 publications

Composition-graded quantum barriers improve performance in InGaN-based laser diodes

Composition-graded quantum barriers improve performance in InGaN-based laser diodes

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

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