Recent Progress in High‐Mobility Organic Transistors: A Reality Check

Paterson, Alexandra F.; Singh, Saumya; Fallon, Kealan J.; Hodsden, Thomas; Han, Yang; Schroeder, Bob C.; Bronstein, Hugo; Heeney, Martin; McCulloch, Iain; Anthopoulos, Thomas D.

doi:10.1002/adma.201801079

Cited by 523 publications

(501 citation statements)

References 254 publications

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“…[209] More sites become available for hopping when the carrier density rises. For an overview of state-of-the-art mobilities in polymer FETs see Paterson et al [203] Many factors influence the final device performance and effective carrier mobility of polymer semiconductors. In field-effect transistors the carrier density depends on the applied gate voltage and is much higher (10 18 -10 20 cm −3 ) than in diodes (10 14 -10 17 cm −3 ) leading to substantially higher mobility values for the same semiconductor.…”

Section: Charge Transportmentioning

confidence: 99%

“…These include field-effect transistors, [203,269] photovoltaic cells, [92,270] photodiodes, [271,272] electrochromic cells, [262,273] light-emitting diodes, [150,274] thermoelectrics, [275,276] and polaritonic devices. These include field-effect transistors, [203,269] photovoltaic cells, [92,270] photodiodes, [271,272] electrochromic cells, [262,273] light-emitting diodes, [150,274] thermoelectrics, [275,276] and polaritonic devices.…”

Section: Applicationsmentioning

confidence: 99%

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Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Zaumseil

2018

Adv Elect Materials

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With the ability to produce large amounts of purely semiconducting and even monochiral dispersions of single-walled carbon nanotubes (SWCNT) their application as a bulk material in thin film devices on a large scale becomes feasible. Their physical properties, processing, and final devices are quite similar to those of semiconducting polymers. In the extreme case one may view carbon nanotubes as very long, rigid, and fully conjugated polymers. This analogy raises the question whether the knowledge accumulated over the last two decades of processing and studying conjugated polymers could be transferred to solution-processed nanotube devices. Here, the optical and electronic properties of both materials in solution and in thin films are discussed and compared with a focus on their application in optoelectronic devices. Some striking similarities and common issues are highlighted to show the connection between conjugated polymers and SWCNTs as 1D semiconductors.

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Section: Charge Transportmentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Zaumseil

2018

Adv Elect Materials

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“…We investigated two different but similar fluoropolymer dielectrics, Cytop and poly [4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole-co-tetrafluoroethylene] (Teflon AF2400 or AF2400), in top-gate bottom-contact (TG-BC) small-molecule/polymer-blend OTFTs made from 2,7-dioctyl [1] benzothieno [3,2-b] [1]benzothiophene (C 8 -BTBT) and indacenodithiophene-benzothiadiazole (C 16 IDT-BT). We investigated two different but similar fluoropolymer dielectrics, Cytop and poly [4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole-co-tetrafluoroethylene] (Teflon AF2400 or AF2400), in top-gate bottom-contact (TG-BC) small-molecule/polymer-blend OTFTs made from 2,7-dioctyl [1] benzothieno [3,2-b] [1]benzothiophene (C 8 -BTBT) and indacenodithiophene-benzothiadiazole (C 16 IDT-BT).…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5] However, these successful improvements in µ will be in vain unless other important operating parameters are also improved. [1][2][3][4][5] However, these successful improvements in µ will be in vain unless other important operating parameters are also improved.…”

mentioning

confidence: 99%

“…

the greatest focus placed on improving the charge-carrier mobility (µ). Not only are the µ values reported for OTFTs suffering from R C at a high risk of being overestimated or underestimated, [1,6,7] but a large R C can also prevent OTFT miniaturization. One particularly weak point in OTFTs that use undoped, wide-bandgap organic semiconductors (OSCs) is contact resistance (R C ).

…”

mentioning

confidence: 99%

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Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors

Paterson

Mottram

Faber

et al. 2019

Adv Elect Materials

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the greatest focus placed on improving the charge-carrier mobility (µ). [1][2][3][4][5] However, these successful improvements in µ will be in vain unless other important operating parameters are also improved. One particularly weak point in OTFTs that use undoped, wide-bandgap organic semiconductors (OSCs) is contact resistance (R C ). Not only are the µ values reported for OTFTs suffering from R C at a high risk of being overestimated or underestimated, [1,6,7] but a large R C can also prevent OTFT miniaturization. [8] These points are important if OTFTs are ever to be used in integrated circuits (ICs), where IC operating frequencies can be increased by reducing the channel length and improving µ. [9,10] Indeed, Hagen Klauk recently calculated two key requirements for OTFTs to be used in GHz frequency applications for the "internet of things": i) R C less than 100 Ωcm and ii) channel dimensions either equal to or less than 1 µm. [9] In principle, these requirements can be met by reducing R C . Although R C is extracted as a single value from the OTFT output characteristics, its magnitude encompasses different aspects of OTFT operation. The largest contributor to R C is the potential energy difference between the metal contact and the OSC. In OTFTs, this energetic difference typically creates a Schottky barrier, which reduces how efficiently charge carriers are injected into/extracted from the OTFT channel. [11,12] Therefore, much research has focused on techniques that improve this energetic mismatch, such as contact doping, [13][14][15] alternative contact materials, OSC doping, [4,16,17] injection layers, [18,19] and self-assembled monolayer (SAM) treatments. [20,21] However, there are a number of additional factors that influence the magnitude of R C , including the OSC microstructure, [22,23] charge trapping at the metal/OSC interface, [24] as well as the type of dielectric materials employed [25,26] and the microstructure they create at the OSC/dielectric interface.The dielectric layer in OTFTs has attracted significant attention over the years for a variety of reasons. For instance, the all-important charge accumulated channel forms within a few nanometers of the OSC/dielectric interface. [27,28] Also, the dielectric influences numerous OTFT parameters, such as operating voltage, [29] threshold voltage, [30,31] on-off current, [32] subthreshold swing/slope, [33] hysteresis, [34] mobility, [35] and operational stability. [36,37] However, the relationship between the The impact of the gate dielectric on contact resistance in organic thin-film transistors (OTFTs) is investigated using electrical characterization, biasstress stability measurements, and bandgap density of states (DOS) analysis. Two similar dielectric materials, namely Cytop and poly[4,5-difluoro-2,2bis(trifluoromethyl)-1,3-dioxole-co-tetrafluoroethylene] (Teflon AF2400), are tested in top-gate bottom-contact OTFTs. The contact resistance of Cytopbased OTFTs is found to be greater than that of the AF2400-based devices, even though the metal/OSC...

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Multilayer Integration for Organic Thin‐Film Transistors

Guo

Huang

Ouyang

et al. 2021

Digital Encyclopedia of Applied Physics

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The organic thin‐film transistor (OTFT) owns advantages of low processing temperature and excellent mechanical flexibility for creating truly flexible or stretchable electronics on arbitrate substrates. Beyond extensive research efforts in organic semiconductor (OSC) materials, stacking of the OSC and other layers for high performance OTFTs and circuit integration in a manufacturable way becomes vital. In this article, the advantages of OTFTs over inorganic counterparts are discussed in details. Then the suitable devices structures and multi‐layer material stacks for integration are introduced. The key processes for OSC deposition, device multi‐layer stacking, and especially OSC patterning are described. Finally, the circuit integration techniques, including not only the process for formation of via interconnection but also the circuit styles and integration architectures, are reviewed.

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Recent Progress in High‐Mobility Organic Transistors: A Reality Check

Cited by 523 publications

References 254 publications

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Semiconducting Single‐Walled Carbon Nanotubes or Very Rigid Conjugated Polymers: A Comparison

Impact of the Gate Dielectric on Contact Resistance in High‐Mobility Organic Transistors

Multilayer Integration for Organic Thin‐Film Transistors

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