Recent Progress in Development of GaInNAs¿ Based Photonic Devices

Konttinen, J.; Tuomisto, P.; Guină, Mircea; Pessa, M.

doi:10.1109/icton.2006.248371

Cited by 2 publications

(2 citation statements)

References 17 publications

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“…Improvements of the lasing properties of the long-wavelength InGaAsP/inP lasers can be obtained by using strained multi-quantum layers, but the performances at high temperature is still unsatisfactory [1]. Enormous increasing of the high-temperature performance of long-wavelength lasers, can be obtained by using novel material systems based on GaInNAs [1,2]. This realizes very good electron confinement in the active region and, thanks to a large conduction band offset, leads to lasers with excellent high-temperature performance.…”

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confidence: 99%

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Calò

Alexandropoulos

Petruzzelli

2014

2014 16th International Conference on Transparent Optical Networks (ICTON)

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The temperature performance of GaInNAs-GaInAs multi-quantum-well active ridge waveguides, patterned with a periodic one-dimensional grating and a defective region placed in the central layer, has been evaluated to design efficient optical active switches/modulators at the operation wavelength λ ≅ 1.289 μm. At environmental temperature T = 298 K, by properly designing the periodic grating and changing the injected current from I OFF = 0 to I ON = 11 mA, efficient switching characteristics occur in terms of crosstalk, contrast ratio, modulation depth and bandwidth. The proposed modulator preserves these high switching performances even over a wide temperature range. As an example, in the ON state we have verified that the transmittance T ON assumes values within the range 3.2 -3.6 for temperature values ranging from T = 298 K to T = 320 K, whereas T ON reduces to about 2.0 by increasing the temperature up to T = 400 K. Moreover, the full width at half maximum increases from FWHM ≅ 0.91 nm for T = 298 K to FWHM ≅ 1.15 nm for T = 400 K. INTRODUCTIONThe development of optical InP-based devices in optical access network seems to be limited from the influence of the temperature on their transmission performances. In fact, as an example, at high operating temperatures the lasing properties of the InGaAsP/inP lasers drastically worsen, mainly due to the insufficient electron confinement for the small bandgap discontinuity in the conduction band. Moreover, in relatively long-haul and high bit-rate transmissions in the optical fiber communication systems, the instability of the laser oscillation wavelength, due to the temperature changes, could increase the effects of dispersion of the optical fibers. Improvements of the lasing properties of the long-wavelength InGaAsP/inP lasers can be obtained by using strained multi-quantum layers, but the performances at high temperature is still unsatisfactory [1]. Enormous increasing of the high-temperature performance of long-wavelength lasers, can be obtained by using novel material systems based on GaInNAs [1,2]. This realizes very good electron confinement in the active region and, thanks to a large conduction band offset, leads to lasers with excellent high-temperature performance. Dilute nitrides proved advantageous in different applications in optical communication systems such as Semiconductor Optical Amplifiers (SOA) [3], optical active switches [4], vertical-cavity surface-emitting lasers (VCSELs) [5], ridge lasers [6], and disk lasers [7]. Moreover, thank to the design flexibility offered by dilute nitrides, solar cells [8] have been demonstrated.In this paper an active one-dimensional Photonic Crystal (PhC), made of a periodic one-dimensional (1-D) grating of GaInNAs-GaInAs Multi Quantum Wells (MQW) ridge waveguides, has been investigated. In more recent years, the PhCs have offered novel possibilities for controlling [9][10][11][12] and filtering [13-16] the propagating light signals in integrated optical devices even in presence of active materials [17,18].In particular,...

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confidence: 99%

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Calò

Alexandropoulos

Petruzzelli

2014

2014 16th International Conference on Transparent Optical Networks (ICTON)

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“…In this context, active components based on novel material systems such as GaInNAs, also known as dilute nitrides, appear to be very attractive to achieve stable temperature operation [7,8]. These materials realize very good electron confinement in the active region and, thanks to a large conduction band offset, lead to lasers with excellent high-temperature performance and uncooled operation in a wide temperature range (e.g., up to 110 • C) [9][10][11][12][13].…”

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confidence: 99%

Temperature Performance of Gainnas-Based Photonic Crystal Waveguide Modulators

Calò¹,

Alexandropoulos²,

Petruzzelli³

2016

PIER M

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Abstract-The temperature performances of GaInNAs-based semiconductor devices, for next generation communication networks and photonic integrated circuits, are investigated. In particular, GaInNAs-GaInAs Multi Quantum Well active ridge waveguides, patterned with a periodic onedimensional grating and an active defective region placed in the central layer, have been designed for efficient active optical switches and modulators. The switching mechanism was obtained around the Bragg wavelength λ ∼ = 1.2896 µm at room temperature T = 298 K by properly designing the periodic grating and changing the injected current density from J OF F = 0 mA/µm 2 to J ON = 0.496 mA/µm 2 . The proposed device exhibits high performances in terms of crosstalk, contrast ratio, and modulation depth. The temperature performance of the proposed device is analyzed in the range T = 298 K-400 K, showing a good stability of the figures of merit: crosstalk CT, contrast ratio CR, and bandwidth ∆λ. In particular, the CT varies at about 1.2 dB in the whole temperature range, whereas CR and ∆λ experience, respectively, a maximum variation of 25% and 30% of their maximum values.

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Recent Progress in Development of GaInNAs¿ Based Photonic Devices

Cited by 2 publications

References 17 publications

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Thermal performance of photonic crystal waveguiding devices based on GaInNAs/GaInAs quantum-wells

Temperature Performance of Gainnas-Based Photonic Crystal Waveguide Modulators

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