Abstract:Abstract-The temperature performances of GaInNAs-based semiconductor devices, for next generation communication networks and photonic integrated circuits, are investigated. In particular, GaInNAs-GaInAs Multi Quantum Well active ridge waveguides, patterned with a periodic onedimensional grating and an active defective region placed in the central layer, have been designed for efficient active optical switches and modulators. The switching mechanism was obtained around the Bragg wavelength λ ∼ = 1.2896 µm at ro… Show more
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