Recent improvements in AMOS solar cells

Stirn, R. J.; Yeh, Y. C. M.; Wang, E.Y.; Ernest, F. P.; Wu, C.

doi:10.1109/iedm.1977.189157

Cited by 3 publications

(4 citation statements)

References 3 publications

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“…If the drive-in is done in 02, SiO2 will form. It is known that the formation of SiO2 causes the pile-up of phosphorous at the Si-SiO2 interface (1,2) or the so-called "snow plow" effect. The drive-in anneal in N~ permits excess phosphorous to escape from the poly-Si by evaporation.…”

Section: Resultsmentioning

confidence: 99%

“…Two oxides of tin exist, stannous oxide (SnO) and stannic oxide (SnO2); clearly, the deposited films are not composed solely of either of these two oxides. Stannic oxide sublimes upon heating in vacuum and evaporates via the reaction SnO2(s) --SnO(g) 4-1/2 O2(g) [1] above 1250 K (7,8). The oxygen liberated during evaporation is consistent with the tenfold increase in vacuum system pressure.…”

Section: Discussionmentioning

confidence: 99%

“…Metal-insulator-semiconductor (MIS) and heterojunction solar cells have received considerable interest in recent years. Cells have been developed with efficiencies approaching those of conventional homojunction cells and have the added advantage of ready adaptability to mass production (1)(2)(3). However, both types of cells have experienced problems with degradation of their electrical characteristics, leading to life expectancies less than those necessary for practical utilization (4,5).…”

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confidence: 99%

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Auger Study of the Interface in Evaporated Tin Oxide ‐ GaAs MIS Solar Cells

Brinker

Wang

Wadlin

et al. 1981

J. Electrochem. Soc.

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Auger electron spectroscopy was used to study the interface of vacuum‐deposited tin oxide on normalGaAs substrates. The ratio of oxygen to tin in the tin oxide film, thermally evaporated from SnO2 powder, was about 1.53. The films are likely a mixture of normalSnO and SnO2 . A transition region approximately 55Å in width exists between the tin oxide and normalGaAs substrate, possibly composed of oxides of normalGaAs and normalSnO , although the formation of a binary compound false(normalGaSnfalse) is possible. Heating in air further oxidized the tin oxide to SnO2 . Heating in air and vacuum resulted in a Ga‐rich surface on the normalGaAs substrate. Metal‐insulator‐semiconductor solar cells using vacuum‐evaporated tin oxide interfacial layers showed substantial improvement over cells made without the interfacial layer.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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confidence: 99%

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Auger Study of the Interface in Evaporated Tin Oxide ‐ GaAs MIS Solar Cells

Brinker

Wang

Wadlin

et al. 1981

J. Electrochem. Soc.

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“…However these cells had uniformity problems that interfered with large area device fabrication (4). These apparently arose from the thinness (e400A) of the n+ emitter layer (3) and from the Ge diffusing into the p-GaAs layer and acting as a donor impurity at concentrations on the order of IO1* cmd (1,(4)(5)(6). al (7) used MO&D to grow a 1 cm2 heteroface p/n GaAs cell on an n-Ge substrate using a much thicker emitter layer.…”

Section: Introductionmentioning

confidence: 99%