Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review

Mounika, B.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.

doi:10.1016/j.micrna.2022.207317

Cited by 42 publications

(17 citation statements)

References 154 publications

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“…On-resistance (R ON ) of 6.25 Ω-mm is extracted using the minimum of (V DS /I DS ) at V GS = 1 V in the simulation deck. The specific on-resistance (R ON,sp ) of the device is calculated as R ON Â L SD (=1.7 μm) = 0.1 mΩ cm 2 .…”

Section: Characteristicsmentioning

confidence: 99%

“…Despite challenges on the front of high‐quality native substrates, gallium nitride (GaN) based high electron mobility transistors (HEMTs) have been in use for over a few decades and probably surpassed their life‐cycle, for various reasons 1–3 . Currently, gallium‐oxide (Ga 2 O 3 ) is being thoroughly explored for its possible applications in certain areas of power electronics, due to its interesting material properties such as large bandgap (4.5–5.3 eV), estimated high critical field (8 MV/cm), a wide variety of n‐type dopants with controllable doping, and availability of relatively cost‐effective single‐crystal substrates grown using melt‐based systems 4–6 .…”

Section: Introductionmentioning

confidence: 99%

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Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh¹,

Rao

Lenka

et al. 2023

Int J Numerical Modelling

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In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility transistors (HEMTs) by optimizing the gate‐drain distance (LGD) and two T‐gate dimensions given by the—head‐length (LHL) and the foot‐length (LFL). A two‐dimensional (2‐D) physics‐based device simulator attuned with experimental results is used to perform the analysis. The AlN/β‐Ga2O3 HEMT achieves a high two‐dimensional electron gas (2DEG) density of ~3 × 1013 cm−2, which is attributed to large spontaneous as well as piezoelectric polarization components of the 10 nm AlN thick barrier layer. 2DEG density is also numerically validated using widely used polarization model for III nitrides. It is demonstrated that a highly scaled, both lateral and vertical, device with optimized T‐gate dimensions achieves higher blocking voltage (VBR), low on‐resistance (RON), higher cut‐off frequency (fT) and higher maximum oscillation frequency (fMAX), simultaneously. Consequently, AlN/β‐Ga2O3 HEMT achieves a low specific‐on resistance (RON,sp) of 0.1 mΩ cm2 and an off‐state breakdown voltage of 904 V, which corresponds to the record power figure‐of‐merit (PFoM) of ~8172 MW/cm2. Furthermore, fT of 73 GHz and fMAX of 142 GHz are estimated. These results—low power conduction loss along with higher blocking voltage, and superior RF parameters show the potential of the analyzed device T‐gate AlN/β‐Ga2O3 HEMT for high‐power switching and RF applications.

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Section: Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh¹,

Rao

Lenka

et al. 2023

Int J Numerical Modelling

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“…AlGaN/GaN HEMTs utilize the high electron concentration generated by this heterojunction structure, exhibiting significant drive current and excellent material performance. They have long-term reliability and can generate higher output power density, making them highly favored in applications such as high-frequency, high-power switches, sensors, and optoelectronics [21]. Compared to other HEMTs, AlGaN/GaN HEMTs demonstrate superior performance at high temperature, high power, and high bias voltage [15,21].…”

Section: Introductionmentioning

confidence: 99%

Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study

Cao,

Guan,

et al. 2024

J. Phys. D: Appl. Phys.

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In this study, we investigated the impact of strain on the electronic structure and polarization of AlxGa1-xN and AlGaN/GaN heterojunctions using first-principles density functional theory. Our findings reveal that, in the absence of strain, the band gap and electron effective mass of AlxGa1-xN increase with higher Al composition. Similarly, the spontaneous and piezoelectric polarization also increase accordingly. Moreover, under biaxial 5% tensile strain and 5% compressive strain, the two-dimensional (2D) electron gas surface density in the AlGaN/GaN heterojunction reaches 8.12×1012 cm-2 and 2.50×1012 cm-2, respectively. Comparatively, the surface density without strain is 5.62×1012 cm-2. Tensile strain significantly enhances the 2D electron gas surface density, which holds potential theoretical value for improving the electrical performance of AlGaN/GaN high electron mobility transistors.

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“…1) Silicon (Si), the current mainstream semiconductor, can be easily mass-produced, and it currently accounts for 90% of the semiconductor market. However, since its physical properties complicate efforts to increase the efficiency of Si semiconductor devices, research is attempting to fabricate semiconductor devices from new semiconductor materials, such as silicon carbide (SiC) [2][3][4][5] and gallium nitride (GaN), [6][7][8][9] which are wide bandgap materials providing excellent physical properties. Gallium oxide (Ga 2 O 3 ) is a wide bandgap semiconductor material that has attracted particular attention in recent years.…”

Section: Introductionmentioning

confidence: 99%

Examination of proper impurity doping and annealing conditions for solution processed Ga₂O₃ thin films

Momota

Shibahara

et al. 2023

Jpn. J. Appl. Phys.

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We investigated the preparation of Ga2O3 thin films using a wet-process and the Sn-doping conditions to improve resistivity. Undoped and Sn-doped single layer Ga2O3 thin films were prepared by changing the solution concentration, the annealing time, the temperature rise rate, and the rotational speed during deposition. As a result, they were deposited uniformly with good crystallinity and transmittance and relatively small surface roughness. To improve the resistivity by another Sn-doping method, we prepared bilayer samples consisting of undoped Ga2O3 and SnO 2 layers in which Sn atoms can diffuse into the Ga2O3 layer by annealing: the drive-in diffusion method. Although the resistivity was changed, XPS and TEM-EDS measurements revealed that Al diffused from the sapphire substrate, indicating a mixed β-(Ga,Al)2O3 was prepared. By varying the annealing temperature to 800°C, Al diffusion was suppressed and pure Ga2O3 thin films were prepared. After investigating various atmosphere sintering conditions, we found that the samples sintered in a nitrogen atmosphere for both Ga2O3 and SnO 2 showed the lowest resistivity.

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Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review

Cited by 42 publications

References 154 publications

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study

Examination of proper impurity doping and annealing conditions for solution processed Ga₂O₃ thin films

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Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review

Cited by 42 publications

References 154 publications

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study

Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films

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Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Examination of proper impurity doping and annealing conditions for solution processed Ga₂O₃ thin films