Recent developments in IGCT gate units

Backlund, B.; Luscher, M.

doi:10.1109/epe.2007.4417564

Cited by 7 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…could be identified as a function of the initial rate of rise of the gate current di g /dt directly after turn OFF and by assuming that at the beginning, the voltage of the OFF-channel capacitor C off stayed constant: v Coff = 20 V. This value can be considered as very low, when compared to the stray inductance of 1.1 nH of significantly larger commercial gate unit for 4 kA IGCTs [15].…”

Section: High-current Turn-off Validationmentioning

confidence: 99%

IGCT Gate Unit for Zero-Voltage-Switching Resonant DC Transformer Applications

Kucka

Dujić

2022

IEEE Trans. Ind. Electron.

View full text Add to dashboard Cite

Recently, IGCTs have shown a great potential for the soft-switching dc transformer applications based on LLC resonant converter. The zero-voltage switching that is present in this converter topology enables an operation of IGCTs without clamping circuit and with significantly higher switching frequencies, while maintaining the exceptionally low conduction losses. The high voltage and current ratings of the IGCTs make them a preferred choice for an efficient bulk power transmission. This paper shows how gate units for IGCTs can be optimized for this softswitching application. It presents a simplification of the driving topology and the design process for high switching frequencies. This results in low power consumption and a very small size of the gate unit. The prototype of the gate unit is built and experimentally validated in a 2.5 kV 0.75 kA resonant operation of the IGCT.

show abstract

Section: High-current Turn-off Validationmentioning

confidence: 99%