Recent applications of nuclear microprobe analysis to frontier materials

Jamieson, David N.

doi:10.1016/s0168-583x(97)00183-3

Cited by 17 publications

(3 citation statements)

References 35 publications

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“…The uniformity of charge response, temperature-dependent emptying of grain-boundary charge traps and the role of charge trapping at grain boundaries in CVD diamond [66][67][68] as well as polarisation and priming effects have been successfully investigated by IBIC, often in combination with other techniques, as PIXE [69], ion beam induced luminescence (IBIL) [70,71] or X-ray induced charge (XBIC) or light (XBIL) collection [72], providing valuable insights for the development of diamond detectors for tracking applications and for dosimetry [69]. Reviews of various IBIC applications in detectors and wide band gap semiconductors are given in [73,74]. An up-dated review of IBIC/TRIBIC analyses of poly-and mono-crystalline diamond as well as of X-or gamma-ray CdTe/ CdZnTe detectors is presented in Section 5.…”

Section: Review Of Ibic Applicationsmentioning

confidence: 99%

A review of ion beam induced charge microscopy

Breese

Vittone²,

Vizkelethy

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

100

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Section: Review Of Ibic Applicationsmentioning

confidence: 99%

A review of ion beam induced charge microscopy

Breese

Vittone²,

Vizkelethy

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

100

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“…La posibilidad de delimitar la sección del haz de iones al tamaño de 1x1 μm 2 e incluso menos, tiene un gran impacto en muchas situaciones analíticas en todos los campos (27,28,29). La técnica resultante se suele denominar microsonda nuclear o microscopía nuclear.…”

Section: El Microhazunclassified

Análisis de materiales con haces de iones generados por un acelerador electrostático

Font¹

2000

Bol. Soc. Esp. Ceram. Vidr.

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Análisis de materiales con haces de iones generados por un acelerador electrostáticoA. CLIMENt fONt Dpto. Física Aplicada C-xII, Universidad Autónoma Madrid Cantoblanco, E-28049 Madrid.Un acelerador electrostático es una herramienta muy versátil para analizar materiales mediante las técnicas de haces de iones. Estas técnicas, conocidas como técnicas IBA (ion beam analysis), son ampliamente utilizadas para la caracterización cuantitativa y no destructiva de la estructura y la composición de la zona próxima a la superficie de cualquier material, hasta profundidades de 10 μm y con resolución superficial de 2 a 20 nm. Sus aplicaciones abarcan muchos campos, entre los que destacan: ciencia de materiales, microelectrónica, metalurgia, mineralogía, estudios medioambientales, ciencias biomédicas, arte y arqueología, etc. En este trabajo se revisan los principios físicos de las técnicas IBA y algunas de sus capacidades analíticas se ilustran con una selección de ejemplos. Palabras clave: Análisis con haces de iones, caracterización de materiales, RBS, ERDA, PIXE. Materials analysis by ion beam generated from electrostatic accelerator.An electrostatic accelerator is a very versatile tool for the analysis of the materials elemental composition by means of ion beam based analytical techniques. These techniques known as IBA (ion beam analysis) are widely used as a quantitative and non destructive characterization of almost any material down to depth of 10 μm below the surface and with a surface resolution from 2 to 20 nm. Their applications cover a wide range of areas such as: materials science, microelectronics, environmental studies, biomedical sciences, art and archaeology, etc. In this work the general physical principles of IBA are reviewed and its capabilities are illustrated with a selection of examples.

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“…Si 3 N 4 was formed around each gate leaving a space through which the channel was exposed to the ion beam. 3 The MP2 beam-line 20 and a Colutron implanter 9 were used to irradiate the devices with 500 keV He + and 14 keV P + , respectively. The source, drain and gate were bonded into a chip carrier with electrostatic discharge protection.…”

mentioning

confidence: 99%

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

Johnson

Tettamanzi

Alves

et al. 2010

Applied Physics Letters

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We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.

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Recent applications of nuclear microprobe analysis to frontier materials

Cited by 17 publications

References 35 publications

A review of ion beam induced charge microscopy

A review of ion beam induced charge microscopy

Análisis de materiales con haces de iones generados por un acelerador electrostático

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

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