2020
DOI: 10.1007/s40820-020-00439-9
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Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

Abstract: HIGHLIGHTS • A comprehensive review of strain-engineered 2D semiconductors in electronics and optoelectronics. The basic theories and simulation studies of strain introduced piezoelectric effect and piezoresistive effect have been summarized. • The various experimental methods for study strain-engineered 2D semiconductors have been highlighted. • The applications of strain sensor, strain tuning the performance of photodetector and piezoelectric nanogenerator have been reviewed.

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Cited by 97 publications
(61 citation statements)
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References 229 publications
(311 reference statements)
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“…Secondly, the introduction of a novel gain mechanism that is different from the photogating effect could be an optional method so as to reduce the negative impact on the device operating speed and to promote mid‐infrared band light absorption. Thirdly, it has been demonstrated that by introducing external modifications, such as quantum confinement, [ 101–105 ] pressure, [ 106–109 ] mechanical strain [ 110–118 ] , and chemical doping means, [ 119–123 ] can significantly extend the spectral response of 2D materials, and tune the performance of 2D materials based photodetectors.…”
Section: Methods To Improve the Device Performancementioning
confidence: 99%
“…Secondly, the introduction of a novel gain mechanism that is different from the photogating effect could be an optional method so as to reduce the negative impact on the device operating speed and to promote mid‐infrared band light absorption. Thirdly, it has been demonstrated that by introducing external modifications, such as quantum confinement, [ 101–105 ] pressure, [ 106–109 ] mechanical strain [ 110–118 ] , and chemical doping means, [ 119–123 ] can significantly extend the spectral response of 2D materials, and tune the performance of 2D materials based photodetectors.…”
Section: Methods To Improve the Device Performancementioning
confidence: 99%
“…Resistive Mechanism: The resistance-based mechanism for flexible strain/pressure sensing is denoted as piezoresistive, namely the material resistance change induced by external strain/pressure and generally behaving as current or resistance signal output. [87] Piezoresistive feature stands out among all the foregoing mechanisms for flexible strain sensor design…”
Section: Electrical Mechanismmentioning
confidence: 99%
“…For instance, piezoelectric effect is another important mechanism for pressure sensor design. [43,87] For piezoelectric materials, there will be electrical polarization and potential difference which are the sources for pressure sensing and direct power generation under an applied impact force. [87,100] According to the constitutive model of piezoelectric polymers, piezoelectric coefficient (d 33 ) could be written as the following: [43,73] 33 (5) in which Q and F denote charge and force, C and V OC are capacity and open-circuit voltage, ε r and ε 0 are relative permittivity and vacuum permittivity, respectively.…”
Section: Electrical Mechanismmentioning
confidence: 99%
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“…As for electrical properties, proper strain amplitude can improve the performance of FETs by increasing the carrier mobility of 2D materials 23 . The piezoresistive and piezoelectric effect appear in strained 2D materials, allowing their potential applications in the sensors, photodetectors, and nanogenerators 24 . In addition, strain can not only modulate the magnetism of intrinsic van der Waals magnets but also induce magnetism in nonmagnetic 2D materials 25,26 .…”
Section: Introductionmentioning
confidence: 99%