Recent Advances in SiC Power Devices

Cooper, James A.; Melloch, M. R.; Woodall, J. M.; Spitz, J.; Schoen, K.J.; Henning, Jason

doi:10.4028/www.scientific.net/msf.264-268.895

Cited by 50 publications

(21 citation statements)

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“…Several techniques have been shown to reduce the field crowding at the edges, thus resulting in higher breakdown voltages. These include 1) the use of floating metal field rings (FMR) and resistive Schottky barrier field plates (RESP) as reported by Bhatnagar et al [3]; 2) the use of implantation of neutral species at the periphery of the diode to form an amorphous area around the periphery of the device [4]- [7]; and 3) the p-n junction guard-ring termination formed by a local oxide process (LOCOS) [8]. In most of these structures, the SiC surface is unpassivated and there is no dielectric isolation between devices on the chip.…”

mentioning

confidence: 99%

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena

Steckl

1999

IEEE Trans. Electron Devices

192

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Abstract-We have fabricated 1 kV 4H and 6H SiC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination. This simple structure when used with a high barrier height metal such as Ni has consistently given us good yield of Schottky diodes with breakdown voltages in excess of 60% of the theoretically calculated value. This paper presents the design considerations, the fabrication procedure, and characterization results for these 1 kV Ni-SiC Schottky diodes. Comparison to similarly fabricated Pt-SiC Schottky diodes is reported. The Ni-SiC ohmic contact formation has been studied using Auger electron spectroscopy and X-ray diffraction. The characterization study includes measurements of current-voltage (I0V ) temperature and capacitance-voltage (C0V ) temperature characteristics. The high-temperature performance of these diodes has also been investigated. The diodes show good rectifying behavior with ON/OFF current ratios, ranging from 10 6 to 10 7 at 27 C and in excess of 10 6 up to 300 C.

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confidence: 99%

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena

Steckl

1999

IEEE Trans. Electron Devices

192

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“…Furthermore, SiCbased devices are capable to operate at high temperatures (850°C). In recent years there has been considerable progress in the development of power devices, based on SiC of microwave range (Cooper et al, 1998). In addition to its unique electrical properties, the silicon carbide has the ability to crystallize in different modifications (polytypes).…”

Section: −1mentioning

confidence: 99%

Study of the Possibility of Polytype 3c Silicon Carbide Bulk Crystals Growing for Use in Power Devices

Alexandrovich¹,

Булат²

2014

American Journal of Applied Sciences

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Due to its electro-physical parameters, the silicon carbide is a promising material for power devices, including the microwave range. In recent years there has been considerable progress in the development of power devices, based on SiC. Serious problem, which hinders the widespread commercialization of SiC bipolar power devices, is the p-n structures degradation during high densities of passing forward current. In 1981 the blue SiC LED's emission spectrum over time degradation was detected. Later, after the creation of power rectifier diodes, based on SiC, it was found that their characteristics are also deteriorated with increase of operating time. It was found that the cause of degradation are the so-called "Stacking Faults" (SF) -i.e., the formation of cubic SiC layers inside the hexagonal SiC diodes during direct current flow through them. However, it is easy to assume that this degradation mechanism is absent in devices, completely based on cubic polytype 3C-SiC. This study is dedicated to the study of possibility of creating device heterostructures based on 3C-SiC. It is shown that the heterojunction between SiC polytypes may be more structurally perfect than heterojunctions between semiconductors with different chemical nature. The conclusion on perspectivity of SiC-based heterostructures application in modern electronic devices is made.

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“…The GaN is also effective for a fast recovery or freewheeling diode, since they have a very higher switching speed, and a very low recovery charge. Recently, using SiC, a Schottky barrier diode (SBD) with dual Schottky metal structures was proposed for realizing a low on-state voltage [11,12]. These techniques are based on those of a static induction transistor (SIT) [13].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN field effect Schottky barrier diode (FESBD)

Yoshida

Ikeda

et al. 2005

phys. stat. sol. (c)

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We demonstrate a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure to obtain a low on-voltage. The vertical and planar FESBDs were tried. A vertical AlGaN/GaN heterostructure was regrown by a selective area growth (SAG) technique using a metalorganic chemical vapor deposition (MOCVD). The contact layer was also grown using an SAG technique. Dual Schottky structures were fabricated to obtain a low on-voltage. That is, Al/Ti was used for a low Schottky barrier metal and Pt used for a higher barrier metal. The on-voltage of the diode was below 0.1 V. By the pinch-off effect of a higher Schottky barrier electrode, the reverse breakdown voltage was over 400 V although the Al/Ti used for a low Schottky barrier metal showed an ohmic property.

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Recent Advances in SiC Power Devices

Cited by 50 publications

References 0 publications

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Study of the Possibility of Polytype 3c Silicon Carbide Bulk Crystals Growing for Use in Power Devices

AlGaN/GaN field effect Schottky barrier diode (FESBD)

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