High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Saxena, Vishal; Su, Jian; Steckl, A. J.

doi:10.1109/16.748862

Cited by 192 publications

(87 citation statements)

References 21 publications

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“…1,2 Due to the higher breakdown electric field and wide band gap of silicon carbide, metal-semiconductor devices such as Schottky diodes have huge potential to be a valuable alternative to Si-based switching devices for both high power and speed. 3 For example, metal-semiconductor contacts have many applications such as the gate electrodes of the metal semiconductor field-effect transistors (MESFET), the source and drain contacts in metal oxide semiconductor field-effect transistors (MOSFET), and the electrode for impact ionization avalanche transit time (IMPATT) oscillators. 4 The electrical characterization of these devices strongly depend on the Schottky barrier height (φ B ) of metals.…”

Section: Introductionmentioning

confidence: 99%

Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

Lee

Zetterling

Östling

2001

Journal of Elec Materi

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We investigated Schottky barrier diodes of several metals (Ti, Ni, and Au) having different metal work functions to p-type 4H-SiC (0001) using I-V and C-V characteristics. Contacts showed excellent Schottky behavior with stable ideality factors of 1.07, 1.23, and 1.06 for Ti, Ni, and Au, respectively, in the range of 24°C to 300°C. The measured Schottky barrier height (SBH) was 1.96, 1.41, and 1.42 eV for Ti, Ni, and Au, respectively, in the same temperature range from I-V characteristics. Based on our measurements for p-type 4H-SiC, the SBH (φ Bp ) and metal work functions (φ m ) show a linear relationship of φ Bp = 4.58 -0.61φ m and φ Bp = 4.42 -0.54φ m for I-V and C-V characteristics at room temperature, respectively. We observed that the SBH strongly depends on the metal work function with a slope (S ≡ φ Bp /φ m ) of 0.58 even though the Fermi level is partially pinned. We found the sum of the SBH (φ Bp + φ Bn = E g ) at room temperature for nand p-type 4H-SiC to be 3.07 eV, 3.12 eV, and 3.21 eV for Ti, Ni, and Au, respectively, using I-V and C-V measurements, which are in reasonable accord with the Schottky-Mott limit.

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Section: Introductionmentioning

confidence: 99%

Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

Lee

Zetterling

Östling

2001

Journal of Elec Materi

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“…Ni and Ti are the metals most widely used in the fabrication of SiC Schottky diodes. [9][10][11][12] However; Ni/SiC Schottky diodes have been shown to produce nonideal current-voltage (I-V) characteristics accompanied by dependence of SBH on the surface preparation conditions. 12-14 Such contacts were improved by sintering the Ni between 500°C and 600°C to form nickel silicide (N 2 Si).…”

Section: Introductionmentioning

confidence: 99%

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Oder

Martin

Adedeji

et al. 2007

Journal of Elec Materi

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We report on improved electrical properties and thermal stability of ZrB 2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20°C and 800°C. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased with deposition temperature, from 0.87 eV for contacts deposited at 20°C to 1.07 eV for those deposited at 600°C. The Rutherford backscattering spectroscopy (RBS) spectra of these contacts revealed a decrease in oxygen peak with an increase in the deposition temperature and showed no reaction at the ZrB 2 /SiC interface. These results indicate improved electrical and thermal properties of ZrB 2 /SiC Schottky contacts, making them attractive for high-temperature applications.

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“…The cathode contact is placed symmetrically on both sides of the anode. To reduce the electric field crowding at the trench edges, metal field termination is used [7]. We have compared the ShOC rectifier with LMDS and the conventional low-barrier Schottky (LBS) and high-barrier Schottky (HBS) structures.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

ShOC rectifier: a new metal-semiconductor device with excellent forward and reverse characteristics

Kumar

2005

IEEE Trans. Electron Devices

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Abstract-We report a new structure, called the shielded Ohmic contact (ShOC) rectifier which utilizes trenches filled with a high-barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the Ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high-barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectifier.

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High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Cited by 192 publications

References 21 publications

Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

ShOC rectifier: a new metal-semiconductor device with excellent forward and reverse characteristics

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