2009
DOI: 10.1016/j.jmmm.2009.01.004
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Recent advances in processing and applications of microwave ferrites

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Cited by 755 publications
(248 citation statements)
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“…International Journal of Antennas and Propagation microwave devices that need strong coupling to electromagnetic signals and nonreciprocal behavior [84].…”
Section: Metaradome Designs Involving Active/lumped Elementsmentioning
confidence: 99%
“…International Journal of Antennas and Propagation microwave devices that need strong coupling to electromagnetic signals and nonreciprocal behavior [84].…”
Section: Metaradome Designs Involving Active/lumped Elementsmentioning
confidence: 99%
“…The systematic study and applications of gyromagnetic properties of hexaferrites started in 1955 (Weiss & Anderson, 1995;Weiss, 1955;Sixtus et al, 1956). Currently, in the world, enormous progress in fundamental theoretical and experimental laboratory studies of various properties of hexaferrites, their synthesis, and engineering of a wide range of microwave and mm-wave coatings and devices on their basis has been achieved -see, for example, papers (Harris et al, 2006(Harris et al, , 2009 and references therein. Hexaferrites as the materials for extermely high-frequency (EHF) range, Ka (27-40 GHz), U (40-60 GHz), V (60-80 GHz), W (80-100 GHz) bands, and higher, have been also studied and applied in Russia since middle 1950s.…”
Section: Introductionmentioning
confidence: 99%
“…Spinel oxides, presenting a rich variety of functional properties, receive increasing interest as alternative materials for applications in electronics and communications. [1][2][3] For instance, the combination of high electrical resistance and room temperature ferromagnetism in CoFe 2 O 4 (CFO) can be exploited to build active tunnel barriers in spin filter devices. 1,4 But the future incorporation of spinel oxides as active materials in electronics will critically depend on its epitaxial integration with silicon, which requires a buffer layer to avoid chemical interaction and allows lattice matching.…”
mentioning
confidence: 99%
“…It will be shown that CFO films are (111) out-of-plane oriented, they present two crystal variants (denoted A and B, corresponding to at a substrate temperature of 500 C, using a stoichiometric Sc 2 O 3 target. Air exposed Sc 2 O 3 buffered Si(111) were used as substrates to grow CFO films (24 and 36 nm thick) by PLD (k ¼ 248 nm, repetition rate of 5 Hz, fluence $1.5 J/ cm 2 , and target-substrate distance $50 mm). The substrate temperature was 550 C, and deposition started under base pressure ($10 À7 mbar) and $5Â10 À4 mbar oxygen was introduced after 40 laser pulses, and after 90 additional laser pulses, the pressure was increased to 0.1 mbar.…”
mentioning
confidence: 99%
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