Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

Abstract

Abstract2D materials, such as graphene, transition metal dichalcogenides, and black phosphorus, have become the most potential semiconductor materials in the field of optoelectronic devices due to their extraordinary properties. Owing to the layer‐dependent and appropriately sized bandgaps, photodetectors based on various 2D materials are designed and manufactured rationally. Utilizing the unique properties of 2D materials, many surprising physical phenomena of junctions based on 2D materials can be obtained after different 2D materials are stacked together. This makes heterojunctions more popular than 2D materials themselves, and the design of 2D materials for human beings is easier than ever. In this review, recent progress in optoelectronic applications based on 2D materials and their heterojunctions is summarized and discussed.

2D Materials Based Optoelectronic Memory: Convergence of Electronic Memory and Optical Sensor

“…3The mechanical flexibility and optical transparency of 2D materials are appropriate for the application of ORAMs in an artificial eye. The structure and physical properties of 2D materials have been overviewed in the existing reports [33][34][35]. In this paper, we mainly focused on the review and perspective of 2D materials for memory applications.…”

Novel two-dimensional monoelemental and ternary materials: growth, physics and application

“…Their bandgap is in the range of 0.2-2.1 eV, with broadband optical absorption efficient (>10 4 cm −1 ) and moderate carrier mobility (10-10 2 cm 2 · V −1 · s −1 ). Moreover, crystal type, bandgap structure, unique physics, (opto)electronic devices performance and biomedical application have been discussed by a number of reviews and research papers in recent years [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. Nevertheless, because of the covalent bonding between the anion/ion atoms and the general weak interlayer coupling effect, TMCs and their heterostructures have suffered from intrinsic/extrinsic disorder (vacancies, anti-site, substitution) and interface impurity (small molecules), leading to the downtrend or strange phenomenon in electronic and optoelectronic properties [38,39].…”

2D pn junctions driven out-of-equilibrium

“…The need for miniaturization of structures in modern semiconductor electronics has directed signicant attention toward the fabrication of pn junctions based on atomically thin materials such as graphene, phosphorene, silicene, germanene, etc., and the family of transition metal dichalcogenides (TMDs). [1][2][3][4][5][6][7] This kind of 2D pn junction takes advantage of the ultra-thin nature of 2D materials to offer new and exciting possibilities which are impossible to achieve by its 3D counterpart. These 2D pn junctions will be an essential part of the new generation of 2D crystal based electronic and optoelectronic devices such as photodiodes, transistors, solar cells, photo-detectors, etc.…”