Recent advances in one-dimensional organic p–n heterojunctions for optoelectronic device applications

Li, Qingyuan; Ding, Shang; Zhu, Weigang; Feng, Lei; Dong, Huanli; Hu, Wenping

doi:10.1039/c6tc03280j

Cited by 41 publications

(32 citation statements)

References 77 publications

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“…Organic p–n junctions are of great importance in modern electronics, as they are the most basic elements for organic complementary circuits . Until now, various OSCC p–n heterojunctions have been successfully prepared .…”

Section: Patterning Of Organic Semiconductor Crystalsmentioning

confidence: 99%

Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications

Zhang

Deng

Jia

et al. 2019

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Development of high‐performance organic electronic and optoelectronic devices relies on high‐quality semiconducting crystals that have outstanding charge transport properties and long exciton diffusion length and lifetime. To achieve integrated device applications, it is a prerequisite to precisely locate the organic semiconductor crystals (OSCCs) to form a specifically patterned structure. Well‐patterned OSCCs can not only reduce leakage current and cross‐talk between neighboring devices, but also facilely integrate with other device elements and their corresponding interconnects. In this Review, general strategies for the patterning of OSCCs are summarized, and the advantages and limitations of different patterning methods are discussed. Discussion is focused on an advanced strategy for the high‐resolution and wafer‐scale patterning of OSCC by a surface microstructure‐assisted patterning method. Furthermore, the recent progress on OSCC pattern‐based integrated circuities is highlighted. Finally, the research challenges and directions of this young field are also presented.

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Section: Patterning Of Organic Semiconductor Crystalsmentioning

confidence: 99%

Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications

Zhang

Deng

Jia

et al. 2019

Small

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“…[79] In addition, There is a clear exponential dependence between photocurrent and graphene/C 60 junction energy barrier (Figure 12e, inset). [134][135][136][137][138][139] Compared with planar phototransistors, vertical phototransistors will give much higher performances with more efficient separation of photogenerated excitons into electrons and holes and fast response rate due to their intrinsically much shorter channel lengths. Among the various organic solid states, organic semiconductor single crystals (OSSCs) have attractive advantages of long-range molecular orders and low-density defects, no grain boundaries, which have been the best candidates for fundamental studies and construction of high performance organic electronic/optoelectronic devices and circuits.…”

Section: Vertical Field-effect Phototransistorsmentioning

confidence: 99%

Vertical Organic Field‐Effect Transistors

Liu

Qin

Gao

et al. 2019

Adv Funct Materials

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Field-effect transistors are the fundamental building blocks for electronic circuits and processors. Compared with inorganic transistors, organic field-effect transistors (OFETs), featuring low cost, low weight, and easy fabrication, are attractive for large-area flexible electronic devices. At present, OFETs with planar structures are widely investigated device structures in organic electronics and optoelectronics; however, they face enormous challenges in realizing large current density, fast operation speed, and outstanding mechanical flexibility for advancing their potential commercialized applications. In this context, vertical organic field-effect transistors (VOFETs), composed of vertically stacked source/drain electrodes, could provide an effective approach for solving these questions due to their inherent small channel length and unique working principles. Since the first report of VOFETs in 2004, impressive progress has been witnessed in this field with the improvement of device performance. The aim of this review is to give a systematical summary of VOFETs with a special focus on device structure optimization for improved performance and potential applications demonstrated by VOFETs. An overview of the development of VOFETs along with current challenges and perspectives is also discussed. It is hoped that this review is timely and valuable for the next step in the rapid development of VOFETs and their related research fields.

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“…Both small molecules and conjugated polymers have been applied to build 3D/3D heterojunctions. With the capability of combining the optoelectronic properties of single components together, the idea of fabricating organic heterojunctions provides an approach for functional organic devices . Moreover, taking advantage of alignment and patterning of the OSC, a crystalline heterojunction could be fabricated, facilitating a broad insight into organic materials and the development of various optoelectronic devices .…”

Section: Binary Interfaces In Functional Devicesmentioning

confidence: 99%

Precise Control of Interfacial Charge Transport for Building Functional Optoelectronic Devices

Zhang

Chen

Guo

2019

Adv Materials Technologies

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studies have not only improved device performance, but have even built novel functions. At present, interface engineering has become a research hotspot and has great potential for further applications in diverse fields, ranging from integrated circuits and energy conversion to catalysis and chemical/biosensors. Scientists with various backgrounds have been devoting great efforts to this area, which has moved from the simple improvement of device performance to branch out in broad directions, indicating its interdisciplinarity.As shown in Figure 1c, an important interface for an FET is the semiconductor/ electrode interface, which typically determines the efficiency of charge carrier injection and extraction. In general, the charge injection of a metal/organic semiconductor (OSC) junction can be described in terms of thermal electron emission or tunneling mechanisms, depending on the concentration of defect states inside the bandgap (Figure 1c, left and middle). [1] By carefully selecting the self-assembled monolayer (SAM) or thin buffer interlayer to modify the metal electrode (Figure 1c, right), the interface charge injection barrier can be fine-tuned, thereby significantly reducing the contact resistance of the device. More interestingly, by using a stimuli-responsive conformational isomer as a functional layer to modify the electrode interface, functionalization of the electrodes can be achieved. This concept laid the foundation for the construction of functional devices such as optical/electrical switches, memory, and photodetectors.The semiconductor/dielectric interface is another important interface in FETs, that governs carrier transport (Figure 1d, left), because generation, transport, and regulation of charge carriers all occur in the first few layers (<10 nm) of semiconductors at the interface (Figure 1d, middle). In addition, the modification of the dielectric surface has been shown to help reduce the defects, improve the roughness, change the polarity, and modulate the surface hydrophilic/hydrophobic properties. These changes further affect the transport of carriers at the semiconductor/dielectric interface (Figure 1d, right) and have a significant impact on the morphology of the semiconductor layer. Furthermore, modification of the interface with SAMs or stimuli-responsive layers offers an important and general methodology to improve device performance and even integrate new molecular functionalities, such as photocontrollable memory, superconductivity, and charge-trap memory, into organic electrical circuits. Optoelectronic devices and interfaces therein have captured great attention in both scientific and industrial communities because of the wide variety of their unique properties. From a materials chemistry point of view, each layer and individual component of an optoelectronic device possesses the possibility of flexible chemical modification, making it feasible to dope, mix, and physically/chemically modify the interface. Exploiting the novel properties in optoelectronic devices with diverse la...

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Recent advances in one-dimensional organic p–n heterojunctions for optoelectronic device applications

Abstract: Recent advances in various one-dimensional organic heterojunctions including their synthesis and optoelectronic applications are summarized in this MiniRev article.

Cited by 41 publications

References 77 publications

Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications

Precise Patterning of Organic Semiconductor Crystals for Integrated Device Applications

Vertical Organic Field‐Effect Transistors

Precise Control of Interfacial Charge Transport for Building Functional Optoelectronic Devices

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