Recent advances in MRAM technology

Gallagher, W. J.; Abraham, David W.; Assefa, Solomon; Brown, S. L.; DeBrosse, J.; Gaidis, M. C.; Galligan, E.; Gow, E.; Hughes, Brian; Hummel, John P.; Kanakasabapathy, Sivananda; Kaiser, Christian; Lamorey, M.; Maffit, T.; Milkove, K. R.; Long, Yu; Nowak, Janusz; Samant, Mahesh G.; O’Sullivan, E. J.; Parkin, Stuart S. P.; Robertazzi, R. P.; Trouilloud, P. L.; Worledge, D. C.; Wright, G.; Yang, See‐Hun

doi:10.1109/vtsa.2005.1497086

Cited by 11 publications

(8 citation statements)

References 2 publications

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“…2.14). The largest SW-MRAM chip that has been produced was the 16 Mb chip from the alliance IBM-Infineon [42], which is also the largest MRAM chip ever fabricated. It was built from a 0.18 μm CMOS technology with three additional mask levels for the realization of the MRAM elements.…”

Section: Hxmentioning

confidence: 99%

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Diény

Sousa

Prenat

et al. 2014

Emerging Non-Volatile Memories

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Spintronics (or spin electronics) is a continuously expending area of research and development at the merge between magnetism and electronics. It aims at taking advantage of the quantum characteristic of the electrons, i.e., its spin, to create new functionalities and new devices. Spintronic devices comprise magnetic layers which serve as spin polarizers or analyzers separated by nonmagnetic layers through which the spin-polarized electrons are transmitted. It is considered that spintronics started in 1988 with the discovery of the giant magnetoresistance (GMR) effect, which corresponds to a large variation of the resistance of a magnetic multilayer under the application of a magnetic field [1]. Shortly later, spin valve structures were invented [2]. The latter exhibit GMR at low fields and thereby constitute very sensitive magnetic field sensors. In 1998, they were introduced as sensing elements in readback heads in computer disk drives. More than one billion of such read heads are produced each year. Besides the usual applications of hard disk drives in desktops,

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Section: Hxmentioning

confidence: 99%

Hybrid CMOS/Magnetic Memories (MRAMs) and Logic Circuits

Diény

Sousa

Prenat

et al. 2014

Emerging Non-Volatile Memories

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“…Among the most prominent technologies are Phase Change Memory (PCM) [15], STT-RAM [4], M-RAM [10], R-RAM [2] and Flash-backed DRAM (FB-DRAM) [1]. In general, these memories (except for the FB-DRAM) are slower than DRAM access speed, but it is believed that in later generations, their performance will get closer to that of DRAM.…”

Section: Storage Class Memory (Scm)mentioning

confidence: 99%

MetaData persistence using storage class memory

Jose

Banikazemi

Belluomini

et al. 2013

Proceedings of the 1st Workshop on Interactions of NVM/FLASH With Operating Systems and Workloads

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Storage Class Memory (SCM) blends the best properties of main memory and hard disk drives. It offers non-volatility and byte addressability, and promises short access times with low cost per bit. Earlier research in this field explored designs exploiting SCM features and used either simulations or theoretical models for evaluations. In this work, we explore the design challenges for achieving non-volatility using real SCM hardware that is available now: Flash-Backed DRAM. We present performance analysis of flash-backed DRAM and describe the system issues involved in achieving true non-volatility using the system memory hierarchy which was designed assuming that data is volatile. We present software abstractions which allow applications to be redesigned easily using SCM features, without having to worry about system issues. Furthermore, we present case studies using two applications with different characteristics: an SSDbased caching layer used in enterprise storage (Flash Cache) and an in-memory database (SolidDB), and redesign them using software abstractions. Our performance evaluations reveal that SCM aware Flash Cache design could enable persistence with less than 2% degradation in performance. Similarly, redesigning SolidDB persistence layer using SCM improved the performance by a factor of two. To the best of our knowledge, this is the first work that evaluates SCM performance and demonstrates application redesign using real SCM hardware.

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“…Magnetic Random Access Memories (MRAM) is considered an extremely promising nonvolatile memory technology [1], [2]. Among existing MRAM technologies, Thermally Assisted Switching (TAS) MRAM offers several advantages such as selectivity, single magnetic field and high integration density [3], [4]: the information storage mechanism is based on the current-induced magnetization switch of a magnetic material [5].…”

Section: Introductionmentioning

confidence: 99%