2015 10th International Conference on Design &Amp; Technology of Integrated Systems in Nanoscale Era (DTIS) 2015
DOI: 10.1109/dtis.2015.7127367
|View full text |Cite
|
Sign up to set email alerts
|

Automated characterization of TAS-MRAM test arrays

Abstract: In this work the characterization results of 1kbit TAS-MRAM arrays obtained through RIFLE Automated Test Equipment of 1Kbit array are reported. Such ATE, ensuring flexibility in terms of signals and timing, allowed evaluating hysteresis and to perform 50k write cycles in a very limited time, getting a first insight on TAS-MRAM arrays performance and reliability

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
4
0

Year Published

2015
2015
2018
2018

Publication Types

Select...
3
1

Relationship

3
1

Authors

Journals

citations
Cited by 4 publications
(4 citation statements)
references
References 9 publications
(9 reference statements)
0
4
0
Order By: Relevance
“…The ATE can be easily modified adding/replacing waveform generators to satisfy specific requests for the memory technology without requiring any successive calibrations, granting de-facto its applicability to other NVM technologies. The performance and effectiveness of the proposed ATE has been preliminary demonstrated in [12], [13] and here is fully validated on different MRAM and RRAM test arrays.…”
Section: Introductionmentioning
confidence: 89%
“…The ATE can be easily modified adding/replacing waveform generators to satisfy specific requests for the memory technology without requiring any successive calibrations, granting de-facto its applicability to other NVM technologies. The performance and effectiveness of the proposed ATE has been preliminary demonstrated in [12], [13] and here is fully validated on different MRAM and RRAM test arrays.…”
Section: Introductionmentioning
confidence: 89%
“…This is possible by comparing the measured resistance with a reference resistor, hence its designation as "fixed reference". The performance figures of this technological option have been evaluated for automotive environments in state-of-art [5][6][7]. Despite the good reliability envisioned, there are still some issues in terms of data retention properties at high temperatures that should be carefully evaluated.…”
Section: High-reliable Non-volatile Memoriesmentioning
confidence: 99%
“…Such a technology is already at an intermediate maturity level, that calls for the evaluation of its potentialities at an integrated array level. Many experimental works [8], [9] still show the good performances of single cells structures, whereas only few analyze the behavior of entire arrays [10], [11]: a full array characterization is mandatory to evaluate the cell-to-cell variability and to extract statistical parameters fully representing the memory array.…”
Section: Introductionmentioning
confidence: 99%