Recent Advances in Lithography and High Level Critical Dimension Metrology Needs for Lithography

Abstract

The status and future of imaging metrology needs for lithography AIP Conf. Proc. 550, 339 (2001); 10.1063/1.1354422Metrology needs for the semiconductor industry over the next decade AIP Conf.Abstract. To enable patterning of 65-nm half pitch and smaller dimensions, optical projection lithography is being extended with 193-nm wavelength using water immersion lenses. To enable this extension more complex masks and greater comprehension of variations in the lithography process are being integrated into the integrated circuit design process. Metrology will play a critical role in defining these lithography friendly design rules and practices. The effects of line edge and line width roughness are also becoming increasingly apparent in device performance, so metrology tools need to be modified to accurately measure these variations as well. Tools for measuring critical dimensions, including roughness, with high precision and for quantifying pattern fidelity will be critical to enable the extension of lithography to smaller dimensions.

Unconventional methods for forming nanopatterns

“…The semiconductor industry has used 'conventional' top-down approaches -photo and scanning beam lithographies, for example -to manufacture microelectronic devices at an enormous scale [13][14][15]. The essential elements of photolithographic patterning are illustrated schematically in Fig.…”