Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Ye, Mingxiao; Zhang, Dongyan; Yap, Yoke Khin

doi:10.3390/electronics6020043

Cited by 70 publications

(42 citation statements)

References 256 publications

(332 reference statements)

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“…Traditionally, MoS 2 devices/FETs have been largely demonstrated on SiO 2 substrates in a back-gated configuration. However, a wide range of dielectrics (such as technologically relevant high-κ dielectrics and 2D hBN) have been explored as substrates and superstrates to enable both topand dual-gated MoS 2 devices, and to engineer various critical device parameters [169,315,316]. Quite obviously, tremendous progress has been made in understanding the underlying growth mechanisms, deposition methods and fabrication techniques (including various pre-and post-deposition processes/treatments such as MoS 2 surface pre-functionalization) to integrate several dielectrics on MoS 2 (typically via the ALD method).…”

Section: Role Of Dielectrics In Doping and Mobility Engineeringmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

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Section: Role Of Dielectrics In Doping and Mobility Engineeringmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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“…Given a set of low-quality partial images of multiple chips, the first step is to extract the HFTC of samples by ( 4) and (5). Subsequently, the semi-connection graph of data points is constructed by (6). Finally, the cluster indicators can be obtained by conducting the spectral clustering methods (12) or (13).…”

Section: The Proposed Approachmentioning

confidence: 99%

“…Nowadays, the main phases of the IC's production are distributed globally, including design, synthesis, fabrication and distribution [4]. This global cooperation model makes ICs become vulnerable to the HTs, which can leak secret information, invalidate the IC or cause other catastrophic consequences [5][6][7]. In recent years, many relevant studies have been conducted.…”

Section: Introductionmentioning

confidence: 99%

An Effective Clustering Algorithm for the Low-Quality Image of Integrated Circuits via High-Frequency Texture Components Extraction

et al. 2022

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Verification is one of the core steps in integrated circuits (ICs) manufacturing due to the multifarious defects and malicious hardware Trojans (HTs). In most cases, the effectiveness of the detection relies on the quality of the sample images of ICs. However, the high-precision and noiseless images are hard to capture due to the mechanical precision, manual error and environmental interference. In this paper, an effective approach for processing the low-quality image data of ICs is proposed. Our approach can successfully categorize the partial pictures of multiple objected ICs with low resolution and various noise. The proposed approach extracts the high-frequency texture components (HFTC) of the images and constructs a graph with the correlationship among features. Subsequently, the spectral clustering is conducted for obtaining the final cluster indicators. The low-quality images of ICs can be successfully categorized by the proposed approach, which will provide a data foundation for the following verification tasks. In order to evaluate the effectiveness of the proposed approach, several experiments are conducted in the simulated datasets, which are generated by corrupting the real-world data in different conditions. The clustering results reveal that our approach can achieve the best performance with good stability compared to the baselines.

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“…High-temperature SWIR photodetectors are becoming increasingly significant as sensors in space exploration, night vision, and fire safety [1][2][3][4][5][6]. Due to the synergistic effect of strong electron scattering, low carrier mobility in normal semiconductors, and increased working temperature, the effective photocurrent (I ph ) is quite faint for imaging or target identification [7][8][9][10]. Otherwise, the spectra response range is the primary parameter for SWIR photodetection, which always requires a narrow bandgap and wide spectra adsorption [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

et al. 2022

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A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films.

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Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

Cited by 70 publications

References 256 publications

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

An Effective Clustering Algorithm for the Low-Quality Image of Integrated Circuits via High-Frequency Texture Components Extraction

Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films

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