Recent advances in c-plane GaN visible lasers

Strauβ, U.; Hager, Thomas; Brüderl, G.; Wurm, Teresa; Somers, A.; Eichler, Christoph; Vierheilig, Clemens; Löffler, Andreas; Ristić, Jelena; Avramescu, Adrian

doi:10.1117/12.2041298

Cited by 24 publications

(13 citation statements)

References 11 publications

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“…The green‐gap is not only a problem for LEDs, but also for LDs. Figure shows the power conversion efficiency versus wavelength for the best reported InGaN and AlInGaP LDs that shows a lack of efficient emitters at green‐gap wavelengths. The congruent green‐gap problem in LDs and LEDs is of no surprise, because the spontaneous emission rate which limits LEDs is related to optical gain which limits LDs.…”

Section: Discussionmentioning

confidence: 99%

Advantages of III‐nitride laser diodes in solid‐state lighting

Wierer

Tsao

2015

Physica Status Solidi (a)

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III‐nitride laser diodes (LDs) are an interesting light source for solid‐state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light‐emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor‐converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging for both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.

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Section: Discussionmentioning

confidence: 99%

Advantages of III‐nitride laser diodes in solid‐state lighting

Wierer

Tsao

2015

Physica Status Solidi (a)

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“…Commercial GaN diode lasers (OSRAM PL TB450B) were analyzed. The epitaxial structure contained an asymmetric QW structure similar to the one described by Strauß et al [ 51 ] They emitted 1.6 W output power at 1.6 A operation current in the continuous wave mode with a threshold current of 0.2 A. The laser ridge had a dimension of 15 × 1200 μm (width ×length).…”

Section: Methodsmentioning

confidence: 99%

Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Hempel

Dadgostar

Jiménez

et al. 2021

Physica Rapid Research Ltrs

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Among the limitations known from semiconductor lasers, catastrophic optical damage (COD) is perhaps the most spectacular power‐limiting mechanism. Here, absorption and temperature build up in a positive feedback loop that eventually leads to material destruction. Thus, this is truly an ultimate mechanism, and its continued suppression is a manifestation of progress in device design and manufacturing. After an overview of the current state of knowledge, new investigations of COD using artificially micrometer‐sized starting points created within the active zone in the cavity of 450 nm GaN semiconductor lasers are reported on. Defect growth mechanisms and characteristics are studied during 800 ns current pulses. The defect growth follows the highest light intensity. Secondary defect patterns are studied: complete destruction of the active zone and generation of a point defect cloud at least ≈10 μm into the remaining surrounding material. Extremely large angles (>90°) of damage growth are traced back to the material properties and the aging scenario. The results are compared with former experiments with GaAs‐based lasers.

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“…Sony Corporation reported a 530nm green diode laser with a maximum output power of 2W [7]. Osram Opto Semiconductors GmbH claimed a green diode laser with a maximum output power of 1.25W, with a center wavelength of 517nm at a current of 0.9A [8]. Suzhou Institute of Nano-tech and Nano-bionics of the Chinese Academy of Sciences investigated a 511.3nm wavelength green diode laser with an output power of 1.7W at an injection current of 3A [9].…”

Section: Introductionmentioning

confidence: 99%

Design of high brightness fiber-coupled green diode laser module

Liu

Qin

et al. 2022

Seventeenth National Conference on Laser Technology and Optoelectronics

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As a pump source for Ti: Sapphire solid-state lasers, the fiber-coupled green diode laser module is critical. However, existing study findings are insufficient to meet the demands of high brightness diode laser pump sources. In this paper, a high brightness green diode laser fiber-coupled system based on TO-can diode lasers is designed. The FACs are installed within the TO-can diode lasers. The optical step as the spatial beam combining system is made up of the HR mirror and the optical wedge. We discussed the relationship between the reflected beam deflection angle and the optical wedge surface inclination angle under the condition of different HR mirror inclination angles. After that, a strategy with appropriate heat dissipation effect is obtained through thermal simulation. Finally, the simulation results verify that couple 18 TO-can single emitters into a 50μm core diameter and 0.22 numerical aperture optical fiber with an output power of 16.9W, the fiber coupling efficiency is 98%. The brightness is 5.66 MW/(cm 2 • Sr) and the module dimension is L 220mm×W 80mm×H 45mm.

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Recent advances in c-plane GaN visible lasers

Cited by 24 publications

References 11 publications

Advantages of III‐nitride laser diodes in solid‐state lighting

Advantages of III‐nitride laser diodes in solid‐state lighting

Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers

Design of high brightness fiber-coupled green diode laser module

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