2020
DOI: 10.1016/j.ensm.2020.07.006
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Recent advances and perspectives of 2D silicon: Synthesis and application for energy storage and conversion

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Cited by 89 publications
(56 citation statements)
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“…The most important aspect for the dimensionality matching includes enhancing electronic conduction between the interface of different dimensions and ensuring dynamic interface adaptation during volume change in cycling noncarbons. [ 48 ]…”
Section: Dimensionality Manipulation Of Functional Carbon Materials In Energy Storagementioning
confidence: 99%
“…The most important aspect for the dimensionality matching includes enhancing electronic conduction between the interface of different dimensions and ensuring dynamic interface adaptation during volume change in cycling noncarbons. [ 48 ]…”
Section: Dimensionality Manipulation Of Functional Carbon Materials In Energy Storagementioning
confidence: 99%
“…), which may destroy the structure of 2D Si due to its strong interaction with the substrates. [ 35 ] 2D Si can also be synthesized from the precursors with layered structures by the chemical exfoliation process. [ 21–23,27 ] Because of the Van der Waals force between layers, however, it is difficult to obtain thin Si nanosheets (Si‐NSs, commonly tens of nanometers).…”
Section: Introductionmentioning
confidence: 99%
“…[ 21–23,27 ] Because of the Van der Waals force between layers, however, it is difficult to obtain thin Si nanosheets (Si‐NSs, commonly tens of nanometers). [ 35 ] In addition, 2D Si is usually coated with carbon by CVD or hydrothermal method, which leads to the aggregation/accumulation of nanosheets, thus significantly increasing their thickness. Furthermore, the inert silicon carbide phase tends to be formed due to the reaction between Si and the decomposed carbon sources in the reducing atmosphere.…”
Section: Introductionmentioning
confidence: 99%
“…To address the issues associated with Si, especially volume expansion, massive efforts have been made, including: avoiding materials pulverization via the design of silicon nanostructures, ( An et al, 2020 ; Qi et al, 2020 ; Sun et al, 2022a ; Sun et al, 2022b ; Li et al, 2022 ) improving cycling stability through SiO/SiO x -based anode materials, ( Wang et al, 2020a ; Tian et al, 2022 ) and increasing electronic/ionic conductivities through utilizing advanced electrolyte additives and novel binders. ( Huang et al, 2019 ; Zhao et al, 2021 ; Zhou et al, 2021 ; Zhu et al, 2021 ) The 3D porous Si-based materials have enough internal voids to accommodate volume expansion due to the existence of their large pores, so that their structures can maintain their integrity during the processes of lithiation/delithiation, avoiding pulverization of silicon-based materials.…”
Section: Introductionmentioning
confidence: 99%