Recent Advanced Ultra‐Wide Bandgap β‐Ga₂O₃ Material and Device Technologies

Abstract

Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (Eg) of 4.8 eV, high theoretical critical breakdown field strength (EC) of 8 MV cm−1, and saturation velocity (νs) of 2 × 107 cm s−1, as well as high Baliga figures of merit (BFOM) of 3000. In addition, Ga2O3 has the advantages of large‐size substrates that can be achieved by low‐cost melt‐grown techniques. This review provides a partial overview of pivotal milestones and recent advancements in the Ga2O3 material growth and device performance. It begins with a discussion of the fundamental material properties of Ga2O3, followed by a description of substrate growth and epitaxial techniques for Ga2O3. Subsequently, the contact technologies between Ga2O3 and other materials are fully elucidated. Moreover, this article also culminates with a detailed analysis of Ga2O3‐based high voltage and high frequency power devices. Some challenges and solutions, such as the lack of p‐type doping, low thermal conductivity, and low mobility are also presented and investigated in this review.

Achieving n-type doped monoclinic (InxAl1-x)2O3 alloys

“…For instance, the large breakdown field provides an advantage over SiC and GaN for power devices such as MOSFETs and rectifiers. [8][9][10] Additionally, Ga 2 O 3 shows promise as a material for solar-blind photodetectors, which have a variety of sensing applications ranging from missile tracking and air defense to ozone-layer monitoring and flame detection. [11][12][13][14][15] Heterostructures that allow for charge-carrier confinement and the formation of two-dimensional electron gases (2DEGs) at the interface are often desired for these device applications.…”

Performance Enhancement of ZnGa2O4 Metal Oxide-Semiconductor Field-Effect Transistors Grown via Metal Organic Chemical Vapor Deposition on Sapphire Substrates

“…The key advantages of ZnGa 2 O 4 over Ga 2 O 3 for MOSFET applications include a higher band gap of 4.4–5.2 eV, better thermal stability, potentially higher electron mobility, superior radiation hardness, and better thermal conductivity . These advantages make ZnGa 2 O 4 a compelling material for MOSFET applications, especially in high-power and high-frequency devices, despite Ga 2 O 3 ’s own advantages such as ease of doping and availability of large-area substrates. , In addition to this, ZnGa 2 O 4 has garnered significant attention, primarily due to their unique spinel crystalline structure and electronic properties, making it a promising candidate for enhancing the performance of MOSFETs, leading to advancements in electronic devices . It is well-known that the variation in zinc (Zn) and gallium (Ga) content plays a pivotal role in determining the structural, electrical, and optical characteristics of the resulting films.…”