Abstract:The monoclinic (In0.25Al0.75)2O3 alloy has been suggested as an ideal material to create monoclinic Ga2O3 heterostructures, as it provides a close lattice match to β-Ga2O3 along with a 1 eV conduction-band offset. Achieving intentional n-type doping in Ga2O3 heterostructures is important for device applications, but this may be difficult due to the high Al content of this alloy. Here, we use density functional theory with a hybrid functional to investigate common donor dopants, in particular, Si, Sn, C, and Ge… Show more
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