Realtime 3D Stress Measurement in Curing Epoxy Packaging

Richter, Jacob; Hyldgård, Anders; Birkelund, Karen; Hansen, Ole; Thomsen, Erik Vilain

doi:10.1109/sensor.2007.4300575

Cited by 2 publications

(2 citation statements)

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“…Richter et al [48], [153], [154] demonstrated a novel piezocoefficient-mapping device to measure 3D stresses in device packaging and also to extract directional piezoresistive coefficients (Fig. 14).…”

Section: Piezoresistance Fundamentalsmentioning

confidence: 99%

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Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

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Section: Piezoresistance Fundamentalsmentioning

confidence: 99%

Section: Figures and Tablesmentioning

confidence: 99%